GaAs, InP, GaN
GaAs, InP, GaN
GaAs, InP, GaN
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Przykład badań: studnie In<strong>GaN</strong> QW samples<br />
Sample b1093: narrow (3 nm) QWs sample Q3<br />
Sample b1045: wide (9 nm) QWs sample Q9<br />
<strong>GaN</strong> capping,<br />
20 nm<br />
MOCVD n-<strong>GaN</strong><br />
Bulk n-<strong>GaN</strong><br />
5x [(3 nm or 9 nm In 0.09 Ga 0.91 N<br />
QW) / 9 nm <strong>GaN</strong> QB, [Si] =<br />
1×10 19 cm -3 ]
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