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GaAs, InP, GaN

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Dla ultrafioletowych laserów nie ma szans<br />

obyć się bez dyslokacji w technologii<br />

planarnej<br />

critical thickness (nm)<br />

10000<br />

1000<br />

100<br />

dislocations<br />

cracking<br />

10<br />

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br />

mismatch (%)

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