GaAs, InP, GaN
GaAs, InP, GaN
GaAs, InP, GaN
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EPD- EPD informacja gdzie się<br />
dyslokacja zaczyna<br />
Nad warstwą aktywną<br />
p-<strong>GaN</strong> (50 nm)<br />
p-<strong>GaN</strong>/p-Al0.16<strong>GaN</strong> (26 Ĺ / 26 Ĺ) * 80 SL<br />
p-<strong>GaN</strong> (70 nm)<br />
In0.04 <strong>GaN</strong>:Si (8 nm)<br />
n-<strong>GaN</strong> (140 nm)<br />
n-<strong>GaN</strong>/Al0.16<strong>GaN</strong> ( 29 Ĺ / 29Ĺ )*110 SL<br />
<strong>GaN</strong>:Si (530 nm)<br />
bulk n-<strong>GaN</strong><br />
p-Al0.3 <strong>GaN</strong> (10 nm)<br />
In10% <strong>GaN</strong> /In4% <strong>GaN</strong>:Mg<br />
(45 Ĺ / 80 Ĺ) * 5 MQW
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