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GaAs, InP, GaN

GaAs, InP, GaN

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R<br />

Al<strong>GaN</strong><br />

HP <strong>GaN</strong><br />

Akceptowalne<br />

Za małe<br />

Wygięcie struktury laserowej w<br />

zależności od grubości podłoża<br />

R(cm)<br />

1000 cladding<br />

100<br />

10<br />

120 µm<br />

90 µm<br />

60 µm<br />

0 5 10 15 20<br />

Al content (%)

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