Universidade Estadual de Campinas Instituto de Qu´ımica ...
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[45] S. R. Ekanayake, M. B. Cortie, M. J. Ford, Design of nanocapacitors and associated<br />
materials challenge. Current Applied Physics 4, 250 (2004).<br />
[46] H. Masuda, K. Fukuda, Or<strong>de</strong>red Metal Nanohole Arrays Ma<strong>de</strong> by a Two-Step Repli-<br />
cation of Honeycomb Structures of Anodic Alumina. Science 268, 1466 (1995).<br />
[47] Y. Kobayashi, C. R. Martin, Highly sensitive methods for electroanalytical chemistry<br />
based on nanotubule membranes. Analytical Chemistry 71, 3665 (1999).<br />
[48] J. W. Diggle, T. C. Downie, C. W. Goulding, Anodic Oxi<strong>de</strong> Films on Aluminum.<br />
Chemical Reviews, 69, 365, (1969).<br />
[49] K. Nielsch, J. Choi, K. Schwirn, R. B. Wehrspohn, U. Gösele, Self-or<strong>de</strong>ring regimes<br />
of porous alumina: The 10 % porosity rule. Nano Letters 2, 677 (2002).<br />
[50] S. Chakraborty, K. Nemoto, K. Hara, P. T. Lai, Moisture sensitive field effect tran-<br />
sistors using SiO2/Si3N4/Al2O3 gate structure. Smart Materials Structures 8, 274<br />
(1999).<br />
[51] J. L. Lin, Y. M. Chu, S. H. Hsaio, J. L. Chin, T. P. Sun, Structures of anodized alu-<br />
minum oxi<strong>de</strong> exten<strong>de</strong>d-gate field effect transistors on pH sensors. Japanese Journal<br />
of Applied Physics 45, 7999 (2006).<br />
[52] T. Konuma, A. Sugawara, T. Tsuji, Process for fabricating an insulated gate field<br />
effect transistor with an anodic oxidized gate electro<strong>de</strong>. US Patent - USPTO, número<br />
460775 (1996).<br />
171