Листа на стоки и технологии со двојна употреба
Листа на стоки и технологии со двојна употреба
Листа на стоки и технологии со двојна употреба
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. Органск<strong>и</strong> <strong>со</strong>ед<strong>и</strong>нен<strong>и</strong>ја <strong>на</strong> арсен, ант<strong>и</strong>мон <strong>и</strong>л<strong>и</strong> фосфор ко<strong>и</strong><strong>и</strong>маат ч<strong>и</strong>стота (неорганск<strong>и</strong> елемент во основата) поголема од99,999 %.Забелешка: 3C003 г<strong>и</strong> контрол<strong>и</strong>ра ед<strong>и</strong>нствено <strong>со</strong>ед<strong>и</strong>нен<strong>и</strong>јата ч<strong>и</strong>јметален, делумно метален <strong>и</strong>л<strong>и</strong> неметален елемент ед<strong>и</strong>ректно поврзан <strong>со</strong> јаглерод во органск<strong>и</strong>от дел <strong>на</strong>молекулата.3C004Х<strong>и</strong>бр<strong>и</strong>д<strong>и</strong> <strong>на</strong> фосфор, арсен <strong>и</strong>л<strong>и</strong> ант<strong>и</strong>мон ко<strong>и</strong> <strong>и</strong>маат ч<strong>и</strong>стотапоголема од 99,999 % дур<strong>и</strong> <strong>и</strong> ако се разреден<strong>и</strong> во <strong>и</strong>нертн<strong>и</strong> га<strong>со</strong>в<strong>и</strong><strong>и</strong>л<strong>и</strong> водород.Забелешка: 3C004 не контрол<strong>и</strong>ра х<strong>и</strong>др<strong>и</strong>д<strong>и</strong> ко<strong>и</strong> <strong>со</strong>држат <strong>и</strong>нертн<strong>и</strong>га<strong>со</strong>в<strong>и</strong> <strong>и</strong>л<strong>и</strong> водород во 20% од н<strong>и</strong>в<strong>на</strong>та молекулар<strong>на</strong>маса <strong>и</strong>л<strong>и</strong> повеќе.3C0053C006С<strong>и</strong>л<strong>и</strong>ц<strong>и</strong>ум-карб<strong>и</strong>д (SiC), гал<strong>и</strong>ум-н<strong>и</strong>тр<strong>и</strong>д (GaN) алум<strong>и</strong>н<strong>и</strong>ум-н<strong>и</strong>тр<strong>и</strong>д(AlN) <strong>и</strong>л<strong>и</strong> алум<strong>и</strong>н<strong>и</strong>ум гал<strong>и</strong>ум-н<strong>и</strong>тр<strong>и</strong>д (AlGaN) „ подлог<strong>и</strong>“ <strong>и</strong>л<strong>и</strong> ш<strong>и</strong>пк<strong>и</strong>,ѓул<strong>и</strong>ња <strong>и</strong>л<strong>и</strong> друг<strong>и</strong> преформ<strong>и</strong> <strong>на</strong> т<strong>и</strong>е матер<strong>и</strong>јал<strong>и</strong>, ко<strong>и</strong> <strong>и</strong>маатотпорност поголема од 10,000 ohm-cm <strong>на</strong> 20°C.„Подлог<strong>и</strong>“ <strong>на</strong>веден<strong>и</strong> во 3C005 <strong>со</strong> <strong>на</strong>јмалку еден еп<strong>и</strong>таксален слој <strong>на</strong>с<strong>и</strong>л<strong>и</strong>ц<strong>и</strong>ум карб<strong>и</strong>д, гал<strong>и</strong>ум н<strong>и</strong>тр<strong>и</strong>д, алум<strong>и</strong>н<strong>и</strong>ум н<strong>и</strong>тр<strong>и</strong>д <strong>и</strong>л<strong>и</strong>алум<strong>и</strong>н<strong>и</strong>ум гал<strong>и</strong>ум н<strong>и</strong>тр<strong>и</strong>д.210
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