Листа на стоки и технологии со двојна употреба
Листа на стоки и технологии со двојна употреба
Листа на стоки и технологии со двојна употреба
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а. Вкуп<strong>на</strong> доза од 5 × 10 3 Gy (с<strong>и</strong>л<strong>и</strong>ц<strong>и</strong>ум) <strong>и</strong>л<strong>и</strong> пов<strong>и</strong><strong>со</strong>ка;b. Проме<strong>на</strong> <strong>на</strong> брз<strong>и</strong><strong>на</strong>та <strong>на</strong> зрачење од 5 × 10 6 Gy (с<strong>и</strong>л<strong>и</strong>ц<strong>и</strong>ум) восекунда <strong>и</strong>л<strong>и</strong> повеќе; <strong>и</strong>л<strong>и</strong>c. Густ<strong>и</strong><strong>на</strong> <strong>на</strong> текот (<strong>и</strong>нтегрален флукс) <strong>на</strong> неутрон<strong>и</strong>(екв<strong>и</strong>валент <strong>на</strong> 1 MeV) од 5 × 10 13 n/cm 2 <strong>и</strong>л<strong>и</strong> пов<strong>и</strong>ока <strong>на</strong>с<strong>и</strong>л<strong>и</strong>ц<strong>и</strong>ум, <strong>и</strong>л<strong>и</strong> негов екв<strong>и</strong>валент за друг<strong>и</strong> матер<strong>и</strong>јал<strong>и</strong>;Забелешка:3A001.a.1.c. не се пр<strong>и</strong>менува <strong>на</strong> полупроводн<strong>и</strong>ц<strong>и</strong><strong>со</strong> <strong>и</strong>золатор од метал (MIS).2. „М<strong>и</strong>крокола <strong>на</strong> м<strong>и</strong>кропроце<strong>со</strong>р<strong>и</strong>“, „м<strong>и</strong>крокола <strong>на</strong>м<strong>и</strong>крокомпјутер<strong>и</strong>“, м<strong>и</strong>крокола <strong>на</strong> м<strong>и</strong>кроконтролор<strong>и</strong>, мемор<strong>и</strong>ск<strong>и</strong><strong>и</strong>нтегралн<strong>и</strong> кола <strong>и</strong>зработен<strong>и</strong> од сложен полупроводн<strong>и</strong>к,а<strong>на</strong>логно-д<strong>и</strong>г<strong>и</strong>талн<strong>и</strong> конвертор<strong>и</strong>, д<strong>и</strong>г<strong>и</strong>тално-а<strong>на</strong>логн<strong>и</strong>конвертор<strong>и</strong>, електроопт<strong>и</strong>чк<strong>и</strong> <strong>и</strong>л<strong>и</strong> „опт<strong>и</strong>чк<strong>и</strong> <strong>и</strong>нтегралн<strong>и</strong> кола“проект<strong>и</strong>ран<strong>и</strong> за „обработка <strong>на</strong> с<strong>и</strong>г<strong>на</strong>л<strong>и</strong>“, програмаб<strong>и</strong>лн<strong>и</strong>лог<strong>и</strong>чк<strong>и</strong> уред<strong>и</strong>, <strong>и</strong>нтегралн<strong>и</strong> кола за неуралн<strong>и</strong> мреж<strong>и</strong>,<strong>и</strong>нтегралн<strong>и</strong> кола <strong>и</strong>зработен<strong>и</strong> по <strong>на</strong>рачка <strong>и</strong> кај ко<strong>и</strong> функц<strong>и</strong>јата енепоз<strong>на</strong>та <strong>и</strong>л<strong>и</strong> контролн<strong>и</strong>от статус <strong>на</strong> опремата <strong>со</strong> која ќе секор<strong>и</strong>ст<strong>и</strong> ова коло е непоз<strong>на</strong>т, проце<strong>со</strong>р<strong>и</strong> <strong>со</strong> брза Фур<strong>и</strong>еватрансформац<strong>и</strong>ја (FFT), програмаб<strong>и</strong>лн<strong>и</strong> ч<strong>и</strong>тачк<strong>и</strong> мемор<strong>и</strong><strong>и</strong> штоможе електр<strong>и</strong>чк<strong>и</strong> да се <strong>и</strong>збр<strong>и</strong>шат (EEPROMs), флеш-мемор<strong>и</strong><strong>и</strong><strong>и</strong>л<strong>и</strong> стат<strong>и</strong>чк<strong>и</strong> мемор<strong>и</strong><strong>и</strong> <strong>со</strong> случаен пр<strong>и</strong>стап (SRAMs), <strong>и</strong>маат ко<strong>и</strong>б<strong>и</strong>ло од следн<strong>и</strong>ве карактер<strong>и</strong>ст<strong>и</strong>к<strong>и</strong>:a. Реж<strong>и</strong>м <strong>на</strong> работа во амб<strong>и</strong>ент<strong>на</strong> температура <strong>на</strong>д 398 K(125° C);b. Реж<strong>и</strong>м <strong>на</strong> работа во амб<strong>и</strong>ент<strong>на</strong> температура под 218 K (-55° C); <strong>и</strong>л<strong>и</strong>c. Реж<strong>и</strong>м <strong>на</strong> работа во опсег <strong>на</strong> амб<strong>и</strong>ент<strong>на</strong> температура од218 K (-55° C) до 398 K (125° C);Забелешка:3A001.a.2. не се пр<strong>и</strong>менува <strong>на</strong> <strong>и</strong>нтегралн<strong>и</strong> кола запр<strong>и</strong>мен<strong>и</strong> во ц<strong>и</strong>в<strong>и</strong>л<strong>на</strong> автомоб<strong>и</strong>лска <strong>и</strong>ндустр<strong>и</strong>ја <strong>и</strong>л<strong>и</strong>за железн<strong>и</strong>ца.3. „М<strong>и</strong>крокола <strong>на</strong> м<strong>и</strong>кропроце<strong>со</strong>р<strong>и</strong>“, „м<strong>и</strong>крокола <strong>на</strong>м<strong>и</strong>крокомпјутер<strong>и</strong>“ <strong>и</strong> м<strong>и</strong>крокола <strong>на</strong> м<strong>и</strong>кроконтролер<strong>и</strong> ко<strong>и</strong> сепро<strong>и</strong>зведен<strong>и</strong> од комплексен полупроводн<strong>и</strong>к <strong>и</strong> ко<strong>и</strong>функц<strong>и</strong>он<strong>и</strong>раат <strong>со</strong> работен такт што <strong>на</strong>дм<strong>и</strong>нува 40 MHz;Забелешка: 3A001.a.3. опфаќа проце<strong>со</strong>р<strong>и</strong> <strong>на</strong> д<strong>и</strong>г<strong>и</strong>тален с<strong>и</strong>г<strong>на</strong>л,д<strong>и</strong>г<strong>и</strong>талн<strong>и</strong> решеткаст<strong>и</strong> проце<strong>со</strong>р<strong>и</strong> <strong>и</strong> д<strong>и</strong>г<strong>и</strong>талн<strong>и</strong>175
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