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Etudes par microscopie en champ proche des phénomènes de ...

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3m R ≃ 0.9m S . This allows to reverse the Fe layer magnetizationfrom +m R to −m R by pulsed-curr<strong>en</strong>t operationof an in-situ magnetic coils and to measure the spin<strong>de</strong>p<strong>en</strong>d<strong>en</strong>ttransmitted curr<strong>en</strong>t at zero external magneticfield.The spin-polarized electron beam is produced by a GaAsphotocatho<strong>de</strong> activated to negative electron affinity bycesium and oxyg<strong>en</strong> <strong>de</strong>position. Un<strong>de</strong>r excitation with acircularly-polarized near-band gap laser light (of <strong>en</strong>ergyhν = 1.58eV), this source yields an electron beam oflongitudinal spin-polarization P 0 , which can be switchedbetwe<strong>en</strong> +25% and −25% by reversing the light polarization.This electron beam passes through a cylindricalelectrostatic <strong>de</strong>flector to convert the longitudinal spin polarizationinto a transverse one aligned along the Fe-layermagnetization axis. The beam is th<strong>en</strong> focused onto thesample by electrostatic electron optics. The electron injection<strong>en</strong>ergy E 0 , referred to the metal Fermi level, iscontrolled by the sample pot<strong>en</strong>tial V 0 . A typical incid<strong>en</strong>tcurr<strong>en</strong>t of 200nA, with a 200meV <strong>en</strong>ergy distributionwidth, is injected into the junction.By analogy with the three terminal transistor-like <strong>de</strong>vices,the curr<strong>en</strong>ts flowing in the metallic layer (“base”)and in the semiconductor (“collector”) are labeled I B andI C respectively. The injected curr<strong>en</strong>t is labeled I 0 . Thesethree curr<strong>en</strong>ts are in<strong>de</strong>p<strong>en</strong>d<strong>en</strong>tly measured using homema<strong>de</strong>isolated curr<strong>en</strong>t amplifiers, which may operate at1kV with an electronic noise of 30fA/ √ Hz. The in<strong>de</strong>p<strong>en</strong>d<strong>en</strong>tmeasurem<strong>en</strong>t of is performed by disconnectingone of the two (base or collector) terminals, and th<strong>en</strong>using the sample as a collecting ano<strong>de</strong>. Fig.2 shows theexperim<strong>en</strong>tal variation of I 0 , I B and I C with the injection<strong>en</strong>ergy E 0 . The injected curr<strong>en</strong>t I 0 is constant assoon as the sample pot<strong>en</strong>tial is significantly larger thanthe pot<strong>en</strong>tial of the last electro<strong>de</strong> of the electron optics(40V). However, at low sample pot<strong>en</strong>tial, the injectioneffici<strong>en</strong>cy is at most reduced by 40%. The curr<strong>en</strong>t conservationrelation I 0 = I B + I C is experim<strong>en</strong>tally verifiedover the whole probed <strong>en</strong>ergy range. At low injection<strong>en</strong>ergy, the base curr<strong>en</strong>t I B is almost equal to I 0 sincethe transmitted curr<strong>en</strong>t I C is very small. But at high injection<strong>en</strong>ergy, I C strongly increases and becomes largerthan the injected curr<strong>en</strong>t I 0 above E 0 = 712eV . At thesame time, the base curr<strong>en</strong>t I B <strong>de</strong>creases, drops down tozero at E 0 = 712eV and th<strong>en</strong> becomes negative. SinceI C increases and overcomes the value of the injected curr<strong>en</strong>t,it is clear that the transport through the metal ismainly governed by electron-electron scattering, providingelectron multiplication by excitation of a secondaryelectron casca<strong>de</strong>.The spin-<strong>de</strong>p<strong>en</strong>d<strong>en</strong>t compon<strong>en</strong>t of the transmitted curr<strong>en</strong>tΔI C = I + C − I− Cis the differ<strong>en</strong>ce betwe<strong>en</strong> the valuesI + C and I− Cof the collector curr<strong>en</strong>t for an incid<strong>en</strong>t electronspin-polarization of respectively +P 0 and −P 0 . Asan example, the measurem<strong>en</strong>t of ΔI C , wh<strong>en</strong> the injection<strong>en</strong>ergy is set at 712eV (the <strong>en</strong>ergy where I C = I 0and I B = 0), is shown in the inset of Fig.2. For this measurem<strong>en</strong>t,the incid<strong>en</strong>t electron polarization was flippedFIG. 2: Variation of the injection curr<strong>en</strong>t I 0, of the base curr<strong>en</strong>tI B measured at the metallic layer terminal, and of thetransmitted curr<strong>en</strong>t I C measured in the semiconductor collectorversus the injection <strong>en</strong>ergy E 0. The inset shows thecollected curr<strong>en</strong>t change due to the spin-<strong>de</strong>p<strong>en</strong>d<strong>en</strong>t electrontransmission. For this measurem<strong>en</strong>t, the <strong>en</strong>ergy was set atE 0 = 712eV and the incid<strong>en</strong>t electron polarization modulatedat 400Hz. The magnetization was several times flipped overby pulsed curr<strong>en</strong>t operation of the magnetic coil. The configurations[+m R, +P 0] and [−m R, −P 0] gives the same value ofI C = ĪC − ΔIC/2, showing a low instrum<strong>en</strong>tal asymmetry.betwe<strong>en</strong> +P 0 and −P 0 by modulating the incid<strong>en</strong>t lightpolarization betwe<strong>en</strong> σ + and σ − at a frequ<strong>en</strong>cy of 400Hz.For each value of the injection <strong>en</strong>ergy, ΔI C is systematicallymeasured for the two opposite magnetizations +m Rand −m R of the Fe layer. This allows to get rid of instrum<strong>en</strong>talasymmetry. As shown in the inset of Fig.2,instrum<strong>en</strong>tal asymmetry is very low and reversing the incid<strong>en</strong>telectron polarization or the sample magnetizationproduces the same transmitted curr<strong>en</strong>t variation. In<strong>de</strong>ed,the spin-filtering effect only <strong>de</strong>p<strong>en</strong>ds on the ori<strong>en</strong>tationof the incid<strong>en</strong>t electron polarization relative to that ofthe magnetization.For the analysis of the experim<strong>en</strong>tal data, we will consi<strong>de</strong>rthe dim<strong>en</strong>sionless quantities:i) the transmission T = I C /I 0 ,ii) the spin <strong>de</strong>p<strong>en</strong>d<strong>en</strong>t transmission ΔT =ΔI C /I 0 ,iii) the transmission spin asymmetryA C =(I + C − I− C )/(I+ C + I− C ) ≈ ΔT/2TNote that these three normalized quantities are not affectedby the <strong>de</strong>crease in the injection effici<strong>en</strong>cy at low

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