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BibliographiePierce75 :Pierce D.T et al, APL 26, 670, Negative electron affinity GAAS – new source ofspinpolarized electron (1975)Pierce76 : Pierce D.T. et al, Phys.Rev. B 13, 5484, Photoemission of spin-polarized fromGAAS (1976)Pierce80 : Pierce D.T. et al, Rev.Sci. Instrm. 51, 478, GAAS spin polarized electron source(1980)Rougemaille03 : Rougemaille N., Transmission d’électrons chauds, polarisés de spin, dansles jonctions Schottky métal ferromagnétique/semiconducteur, thèse de doctorat, EcolePolytechnique (2003)Solomon : Solomon I., Communication privée.Scheer65 : Scheer J.J et al, Solid State Comm. 3, 189 (1965).Young57 : Young J.R. et al, Phys.Rev. 103, 292 (1957)Chapitre VBland94 : Bland J.A.C et B. Heinrich, Ultrathin Magnetic structures I, springer-Verlag BerlinHeidelberg (1994)Bréchet89 : Bréchet Ph., Thèse de doctorat de l’université de Paris XI, (1989).Chelikowsky76 : Chelikowsky J.R et al, PRB. Vol 14, 556, Nonlocal pseudopotentialcalculations for electronic-structure of 11 diamond and zincblend semiconductors (1976)Drouhin00 : Drouhin H-J. et al, PRB 62, 556, Total scattering cross section of spinpolarizedlow-energy electrons in transition metals (2000)Drouhin05 : Drouhin H-J. et al, JAP 97 (6), 063702 Spin detectors operating in the mediumenergyrange (2005)Eklund92 : Eklund E.A et al, PRL. 68, 831, Direct determination of impact-ionization ratesnear threshold in semiconductors using soft-X-ray photoemission (1992)Kobayashi72 : Kobayashi T. et al, IEEE, Trans. Nucl Sci NS-19, 324, Performance of GAASsurface-barrier detectors made from hugh-purity GALLIUM-ARSENIDE (1972)Ludeke93 : Ludeke R. et al, Phys. Rev. Lett. 70 214, Novel transport effects in high-biasballistic-electron-emission spectroscopy (1993).NIST : Standard References database 71 NIST ELECTRON INELASTIC MEAN FREEPATH DATA BASE Version 1.1Pappas91: Pappas D.P. et al, PRL 66, 504, Spin-dependant electron attenuation bytransmission through thin ferromagnetic-films (1991)Prietsch95 : Prietsch M., Physics Reports 253, 163-233, Ballistic-electron-emissionmicroscopy (BEEM)- studies of metal-semiconductor interfaces with nanometer resolution(1995).Quinn62 : Quinn J.J. et al, PRB, 22 (6), 2677-2682 (1980)Rougemaille03 : Rougemaille N., Transmission d’électrons chauds, polarisés de spin, dansles jonctions Schottky métal ferromagnétique/semiconducteur, thèse de doctorat, EcolePolytechnique (2003)Seah79 : Seah M.P. et al, Surface and Interface Analysis 1, 2 (1979).Tereshchenko99 : Tereshchenko O. et al, J.Vac.Sci.Techno. A 17(5), 2655, Composition andstructures of H-Cl-isopropanol treated and vacuum annealed GaAs (100) surfaces (1999)Valet93 : Valet T. et al, PRB 48, 7099-7113, Theory of the perpendicular magnetoresistancein magnetic multilayers (1993)Vlutters02 : Vlutters R. et al, PRB, Vol 65, 024416, Modeling of spin-dependent hot-electrontransport in the spin-valve transistor (2002)162
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RésuméDRISS LAMINEEffet de filtre
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AbstractDRISS LAMINESpin filter eff
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RemerciementsRemerciementsJ’ai r
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Table des matièresTABLE DES MATIER
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Table des matières4.A. Notion de r
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PréambuleChapitre IPréambuleL’u
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PréambuleRougemaille03 : Rougemail
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Chapitre II - Concepts généraux a
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Chapitre III - Réalisation et cara
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Chapitre IV - Réalisation d’un t
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Chapitre V - Modélisation du trans
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Page 170 and 171: BibliographieHopster83 : Hopster et
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Page 186 and 187: secondary electrons. Because of the
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Page 190 and 191: 12APPENDIX A: VARIATION OF THE ELEC
Page 192 and 193: 14multiplication. The variation of
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