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BibliographieWeber01 : Weber W. et al, Science 291, Magnetization precession by hot spin injection (9Feb 2001)Yang94 : Yang Q. et al, PRL 72, 3274, Spin flip diffusion length and giant magnetoresistanceat low temperatures (1994)Zutic04 : Zutic I. et al, Review of modern Physics, Vol 76, April 2004Chapitre IIIBerkovits02 : Berkovits V.L. et al, Appl.Phys.Lett. 80, 3739, Wet chemical nitridation ofGaAs (100) by hydrazine solution for surface passivation (2002)Berling06 : Berling D. et al, JMMM 297, 118, Accurate measurement of the in-planemagnetic anisotropy energy function E-a(theta) in ultrathin films by magneto-optics (2006)Cacho02 : Cacho C. et al, PRL 88, 066601, Spin filtering of free electrons by magneticmultilayers: Towards an efficient self-calibrated spin polarimeter (2002)Chevallier85 : Chevallier J. et al, APL 47 (2), Donor neutralization in GAAS (SI) by atomichydrogen(1985)Claydon04 : Claydon J.S. et al, PRL 93, 037206, Direct observation of a bulklike spinmoment at the Fe/GaAs(100)-4x6 interface (2004)Cowley65 : Cowley A.M. et al, JAP 36, 10, Surface states and barrier height of metalsemiconductorsystems (1965)Drouhin89 : Drouhin H-J. et al, Rev.Sci.Instrum. 60 (6), Ultrahigh-vacuum sample transferdevice with broad temperature-range (June 1989)Durand95 : Durand O. et al, JMMM. 145, 111, Origin of the uniaxial magnetic-anisotropy inFe films grown by molecular-beam epitaxy (1995)Filipe97 : Filipe A., Thèse de doctorat (1997)Filipe97b : Filipe A., APL 70, 129, Structure and magnetism of the Fe/GaAs interface (1997)Filipe98 : Filipe A., PRL 80, 2425, Spin-dependent transmission of electrons through theferromagnetic metal base of a hot-electron transistorlike system (1998)Kneedler97 : Kneedler E.M. et al, PRB 56, 8163, Influence of substrate surfacereconstruction on the growth and magnetic properties of Fe on GaAs(001) (1997)Jansen03 : Jansen R., J.Phys.D : Appl.Phys. 36 R289-R308, The spin-valve transistor: areview and outlook (2003)Lepine98 : Lépine B. et al, JAP 83, 1, Solid state interdiffusions in epitaxial Fe/GaAs(001)heterostructures during ultrahigh vacuum annealings up to 450 degrees C (1998)Lu93 : Lu Z.H. et al, J.Vac.Sci.Technol. B 11 (6), Ultraviolet-ozone oxidation of GAAS (100)and INP (100) (Nov 1993)Lu86 : Lu G.N., Thèse d’état (1986)Marcadet96 : Marcadet X., Thèse de doctorat (1996)Mönch01 : Mönch W, Electronic properties of semiconductor interfaces, SpringerVerlag(2001)Norde79 : Norde H. et al, JAP 50, 5052, Modified forward IV plot for Schottky diodes withhigh series resistance (1979)Paget99 : Paget D. et al, Surface Science 441 (1), 149-157, Photoreflectance spectroscopyinvestigation of the temperature dependence of the photovoltage of clean and cesiatedGaAs(001) (1999)Passlack94 : Passlack M. et al, JAP 77 (2), 686, GA2O3 films for electronic andoptoelectronic applications (1995)Pearton91 : Pearton S.J. et al, Physica B, 170, 85-97 (1991)160
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RésuméDRISS LAMINEEffet de filtre
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AbstractDRISS LAMINESpin filter eff
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RemerciementsRemerciementsJ’ai r
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Table des matièresTABLE DES MATIER
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Table des matières4.A. Notion de r
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PréambuleChapitre IPréambuleL’u
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PréambuleRougemaille03 : Rougemail
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Chapitre II - Concepts généraux a
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Chapitre III - Réalisation et cara
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Chapitre IV - Réalisation d’un t
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Page 168 and 169: 156Conclusion et perspectives
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Page 188 and 189: 10energy is due to the increasing p
Page 190 and 191: 12APPENDIX A: VARIATION OF THE ELEC
Page 192 and 193: 14multiplication. The variation of
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