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Chapitre IV : Filtre <strong>actif</strong> LC compensé du premier ordre<br />

XII. Bibliographie<br />

[1] A. O. SHANA, I. LINSCOTT, L. TYLER<br />

“Frequency-scalable SiGe bipolar RF front-end <strong>de</strong>sign”<br />

IEEE Journal of Solid-State Circuits, Vol.36, N°: 6, juin 2001, page(s):888-895<br />

[2] N. M. NGUYEN, R. G MEYER<br />

“Si IC-compatible inductors and LC passive filters”<br />

IEEE Journal of Solid State Circuits, Vol.25, N°: 4, aout 1990, page(s):1028-1031<br />

[3] MOMENTUM (AGILENT)<br />

http://eesof.tm.agilent.com<br />

[4] ASITIC<br />

http://rfic.eecs.berkeley.edu/~niknejad/asitic.html<br />

[5] A. M. NIKNEJAD, R. G. MEYER<br />

“Analysis, <strong>de</strong>sign, and optimization of spiral inductors and transformers for Si RF<br />

ICs”<br />

IEEE Journal of Solid-State Circuits, Vol. 33, N°: 10, oct 1998, page(s):1470-1481<br />

[6] YU CAO, R. A. GROVES, N. D. ZAMDMER, J. O. PLOUCHART, R. A.<br />

WACHNIK, XUEJUE HUANG, T. J KING, CHENMING HU<br />

“Frequency-in<strong>de</strong>pen<strong>de</strong>nt equivalent circuit mo<strong>de</strong>l for on-chip spiral inductors”<br />

Proceedings of the IEEE, Custom Integrated Circuits Conference,<br />

12-15 mai 2002, page(s) 217-220<br />

210

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