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6. Crecimiento <strong>de</strong> siliciuros <strong>de</strong> tierras<br />

raras epitaxia dos sobre Si(111)<br />

Los siliciuros metálicos <strong>de</strong> tierras raras (TR) epitaxia<br />

dos sobre Si son materiales que presentan propieda<strong>de</strong>s<br />

interesantes <strong>de</strong>s<strong>de</strong> el punto <strong>de</strong> vista tecnológico: un<br />

valor muy bajo <strong>de</strong> la barrera Schottky, un <strong>de</strong>sacuerdo<br />

muy pequeño <strong>de</strong> red con el Si que los soporta y alta<br />

inercia química. Su estructura atómica consiste en un<br />

empaquetamiento alternativo <strong>de</strong> planos hexagonales<br />

<strong>de</strong> la TR involucrada y <strong>de</strong> Si, <strong>de</strong> forma que la distancia<br />

Si-Si en los planos <strong>de</strong> Si es la misma que entre los átomos<br />

<strong>de</strong> Si <strong>de</strong> un plano <strong>de</strong> Si(111) i<strong>de</strong>al. Estos materiales<br />

presentan una estequiometría fraccionaria <strong>de</strong>l tipo<br />

TRSi 1.7<br />

<strong>de</strong>bida a la presencia <strong>de</strong> una estructura or<strong>de</strong>nada<br />

<strong>de</strong> vacantes atómicas en los planos interiores <strong>de</strong> Si.<br />

Sin embargo el <strong>de</strong>talle <strong>de</strong> la estructura superficial <strong>de</strong> los<br />

mismos es objeto <strong>de</strong> controversia. Mediante técnicas <strong>de</strong><br />

fotoemisión, difracción <strong>de</strong> electrones cuantitativa (LEED<br />

I-V) y microscopía túnel (STM) en ultra alto vacío trabajamos<br />

para encontrar un mo<strong>de</strong>lo atómico tanto superficial<br />

como volumínico compatible con una <strong>de</strong>scripción<br />

<strong>de</strong> los estados electrónicos <strong>de</strong> los siliciuros <strong>de</strong> Y y <strong>de</strong><br />

Gd. Así mismo intentamos optimizar el procedimiento<br />

<strong>de</strong> preparación para obtener superficies planas y continuas.<br />

6. Growth <strong>of</strong> rare-earth silici<strong>de</strong>s epitaxially<br />

grown on Si(111)<br />

Rare earth silici<strong>de</strong>s epitaxially grown on Si substrates<br />

show very interesting properties from the technological<br />

point <strong>of</strong> view: they present a very low Schottky barrier<br />

height on n-type silicon, the lattice mismatch between<br />

the silici<strong>de</strong> and the silicon (111) plane is also small and<br />

they are highly inert. The atomic structure <strong>of</strong> the layer<br />

consists <strong>of</strong> an alternative sequence <strong>of</strong> Si and RE planes.<br />

The Si-Si distance in these planes is similar to the distance<br />

<strong>of</strong> neighboring atoms in an i<strong>de</strong>al Si(111) crystal.<br />

One Si atom out <strong>of</strong> 6 is missing leading to a stoichiometry<br />

<strong>of</strong> RESi 1.7<br />

. However, the <strong>de</strong>tailed atomic surface<br />

structure <strong>of</strong> this material is object <strong>of</strong> controversy. By<br />

means <strong>of</strong> photoemission, LEED and STM experimental<br />

techniques in ultra high vacuum conditions we are<br />

studying the relationship <strong>of</strong> the surface atomic with the<br />

electronic structure <strong>of</strong> the Y and Gd silici<strong>de</strong> films.<br />

Moreover we are working on an experimental procedure<br />

for improving the flatness and continuity <strong>of</strong> the<br />

films.<br />

1. C. Rogero, C. Polop, J. L. Sacedón and J. A. Martín Gago.Surf. and interface analysis, 36, 1195-1198 (2004)<br />

2. Rogero, C.; Koitzsch, C.; González, M.E.; Aebi, P.; Cerdá, J.; Martín-Gago, J.A. Phys. Rev. B 69, 045312-10 (2004).<br />

3. Koitzsch, C.; Bovet, M.; Garnier, M.G.; Aebi, P.; Rogero, C.; Martin-Gago, J.A. Surf. Sci. 566, 1047-1051 (2004).<br />

Proyectos: mat2002-395<br />

7. Crecimiento y caracterización <strong>de</strong> capas<br />

<strong>de</strong>lgadas <strong>de</strong> boro-carbono-nitrógeno<br />

Se han estudiado las propieda<strong>de</strong>s mecánicas y tribológicas<br />

<strong>de</strong> (dureza, módulo elástico, fricción y <strong>de</strong>sgaste)<br />

<strong>de</strong> recubrimientos <strong>de</strong>l compuestos binarios y ternarios<br />

<strong>de</strong>ntro <strong>de</strong>l sistema B-C-N, con estructura y composición<br />

controladas. Las películas han sido crecidas a temperatura<br />

ambiente mediante evaporación simultánea <strong>de</strong><br />

boro y carbono utilizando dos cañones <strong>de</strong> electrones,<br />

asistida con bombar<strong>de</strong>o <strong>de</strong> iones sobre la superficie en<br />

crecimiento. El trabajo ha sido dirigido a la obtención<br />

<strong>de</strong> capas con una composición variable <strong>de</strong> carbono, con<br />

estequiometría <strong>de</strong> según la fórmula BC x<br />

N, ya que suponemos<br />

que estas capas son las que pue<strong>de</strong>n presentar<br />

mayor contenido <strong>de</strong> enlaces atómicos <strong>de</strong>l tipo sp 3 . Se<br />

han utilizado diferentes técnicas para evaluar la composición<br />

y la estructura <strong>de</strong> enlace <strong>de</strong> las películas, incluyendo<br />

los análisis mediante Microsonda <strong>de</strong> Rayos<br />

X(EDX)y espectroscopías <strong>de</strong> absorción <strong>de</strong> Rayos X<br />

(XANES) e Infrarrojo (IR).<br />

7. Growth and characterisation <strong>of</strong> boroncarbon-nitrogen<br />

thin films<br />

We have studied the mechanical and tribological properties<br />

(hardness, elastic modulus, friction and wear) <strong>of</strong><br />

BCN coatings with controlled composition and structure.<br />

The films have been grown at room temperature<br />

using simultaneous evaporation from two separated<br />

boron and carbon sources, assisted by concurrent<br />

nitrogen ions. Our work has been focused on the <strong>de</strong>position<br />

<strong>of</strong> films <strong>of</strong> BC x<br />

N stoichiometry with different carbon<br />

content since they are expected to show sp 3 atomic<br />

bonding. Several techniques have been used to assess<br />

the composition and bonding structure <strong>of</strong> the films,<br />

including Energy Dispersive X-ray (EDX), x-ray absorption<br />

(XANES) and Infrared (IR) spectroscopies. Although<br />

the prevalent structure is hexagonal-like, for large carbon<br />

contents the films become more amorphous with a<br />

diamond-like structure revealed by the <strong>de</strong>crease <strong>of</strong> the<br />

<strong>de</strong>nsity <strong>of</strong> * states. The diamond-like BC x N films with<br />

large carbon content show good mechanical properties<br />

and wear resistance.<br />

1. Caretti I.; Jiménez I.; Gago R.; Cáceres D., Abendroth B.; . Albella J. M: Tribological Properties <strong>of</strong> Ternary BCN Films with Controlled<br />

Composition and Bonding Structure”. Diamond and Related <strong>Materials</strong>, 13 (2004) 1532-1537.<br />

Proyectos: Proyecto V PM <strong>de</strong> la CE, ref. no.: 65RD-CT-2000-00333.<br />

131

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