DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
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1.4<br />
1.0<br />
ε zz<br />
0.6<br />
0.2<br />
Applications : Nanostructures III-V : BQ GaN/AlN<br />
Results : strain (in-plane and out-of-plane), absolute<br />
composition in diffraction selected iso-strain volumes<br />
GaN (biaxial strain)<br />
10 ML<br />
Biaxial <strong>de</strong>formation<br />
2 ML<br />
0M L<br />
5 ML<br />
GaN/AlN/Saphire QDs<br />
-2.5 -2.0 -1.5 -1.0<br />
ε xx = (a-a GaN,bulk)/a GaN,bulk<br />
J. Coraux et al. Phys. Rev. B 73, 2006<br />
ε zz<br />
1.5<br />
1.0<br />
11ML<br />
0.5<br />
0.0<br />
18ML<br />
8ML GaN/AlN/SiC QDs<br />
4ML<br />
2ML<br />
• d Ga-N NN : strain in<strong>de</strong>pendant<br />
• Al content ≅ 0, no Al/Ga<br />
intermixing insi<strong>de</strong> the QDs<br />
0ML<br />
-1.4 -1.2 -1.0 -0.8 -0.6<br />
εxx 38/50
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