DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza DAFS - Universidad de Zaragoza
|| Structure factor || Applications : Nanostructures III-V : BQ GaN/AlN : GIMAD F Ga F T 0ML 2ML 10ML 2.9 h 3 2.9 h 3 [10-10] dir. : radial scan √I GaN √I √I AlN (30-30) α i =0.15°
Applications : Nanostructures III-V : BQ GaN/AlN : GIDAFS 2 ML AlN Energy (eV) EDAFS k(Å -1 ) = 0,512x√(E-E seuil ) Out of plane strain, composition : [0001] E • I(E), fixed Q : max. of F Ga • K-edge (10367eV), BM2, ESRF • E : [0001], ⊥ to the growth plane k Wurtzite structure B d Ga-Ga(N) (a diff.,c) (hexagonal symmetry ) N Ga 37/50
- Page 1 and 2: Universidad de Zaragoza Curso de Ma
- Page 3 and 4: TÉCNICAS EXPERIMENTALES µ I diff
- Page 5 and 6: EL DAFS El DAFS es la estructura fi
- Page 7 and 8: Resonant atomic scattering factor f
- Page 9 and 10: y 0 Structure factor: Multi-wavelen
- Page 11 and 12: I F diff 0 F 0 Análisis de datos D
- Page 13 and 14: Using the path formalism for descri
- Page 15 and 16: Spatial selectivity : GaAs xP 1-x/G
- Page 17 and 18: TEM InAs/InP QWrs AFM 200nm GaN/AlN
- Page 19 and 20: Local structure study of InAs/InP Q
- Page 21 and 22: As-O As K-edge EXAFS (BM8-ESRF) Int
- Page 23 and 24: Grazing incidence diffraction BM2-D
- Page 25 and 26: GI-DAFS (Grazing Incidence DAFS) k(
- Page 27 and 28: Diffraction Intensity (a.u.) GIDAFS
- Page 29 and 30: Abs II EXAFS and EDAFS best fit res
- Page 31 and 32: GIDAFS oscillations analysis CP1276
- Page 33 and 34: EXAFS (ε // & ε ⊥) Similar resu
- Page 35: Applications : Nanostructures III-V
- Page 39 and 40: BQ GaN/AlN 10ML : EXAFS vs DAFS k
- Page 41 and 42: BQ GaN/AlN : EDAFS simulations h=2.
- Page 43 and 44: Orden de carga y reflexiones prohib
- Page 45 and 46: Estado electrónico de los sitios o
- Page 47 and 48: Anisotropía del factor de dispersi
- Page 49 and 50: Zona del umbral (DANES) Modelo refl
- Page 51 and 52: Prepico Cálculos “ab initio” d
- Page 53: Grazing Incidence Diffraction Anoma
Applications : Nanostructures III-V : BQ GaN/AlN : GI<strong>DAFS</strong><br />
2 ML AlN<br />
Energy (eV)<br />
E<strong>DAFS</strong><br />
k(Å -1 ) = 0,512x√(E-E seuil )<br />
Out of plane strain, composition :<br />
[0001]<br />
E<br />
• I(E), fixed Q : max. of F Ga<br />
• K-edge (10367eV), BM2, ESRF<br />
• E : [0001], ⊥ to the growth plane<br />
k<br />
Wurtzite structure<br />
B d Ga-Ga(N) (a diff.,c)<br />
(hexagonal symmetry )<br />
N<br />
Ga<br />
37/50
Change language