DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
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Applications : Nanostructures III-V : BQ GaN/AlN<br />
GaN QDs (4ML)<br />
wetting layer (2ML)<br />
AlN buffer (40 ML)<br />
Saphir or SiC substrates<br />
AlN capping of a GaN/AlN QDs layer : strain,<br />
composition, mechanism ?<br />
AFM<br />
- Modified Stranski –<br />
Krastanow growth (MBE)<br />
- AlN, GaN mismatch :<br />
2,4 %<br />
Ga + N<br />
GaN thickness ><br />
critical thickness<br />
GaN QDs<br />
AlN<br />
RHEED<br />
35/50
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