DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
DAFS - Universidad de Zaragoza
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Applications : Nanostructures III-V : BQ GaN/AlN<br />
~ 30o TEM<br />
[0001]<br />
AlN<br />
GaN QDs<br />
BV BV<br />
h= 4 nm<br />
D b = 30 nm<br />
BC BC<br />
{ 11<br />
03}<br />
5 nm<br />
A.D. Andreev et E.P. O’Reilly, APL 79, (2001), 521<br />
P<br />
Nitri<strong>de</strong> : InN (1,9eV), GaN (3,5eV), AlN<br />
(6,2eV) + alloys : visible spectra + UV A<br />
and B : LEDs (B, V) , LDs at 0,4µm<br />
- QDs : dislocations free<br />
- 3D electronic onfinement :<br />
- higher PL intensity<br />
- PL intensity : T in<strong>de</strong>pendant<br />
- Wurtzite (hexagonal cell) : [0001] :<br />
polar axis) : spontaneous + piezo-electric<br />
polarizations : electric field<br />
- PL red shift<br />
- carriers separation<br />
Important parameters :<br />
<strong>de</strong>formation, size, composition<br />
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