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DAFS - Universidad de Zaragoza

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Local structure study of InAs/InP QWrs<br />

Quantum size effect : materials for opto-electronic<br />

(lasers 1.5µm)<br />

Stranski-Krastanow growth (strain release via a 2D-3D<br />

growth transition)<br />

Self-organized 2D growth driven by anisotropic strain at<br />

interface<br />

Physical properties<br />

•strain<br />

•composition<br />

•interface<br />

Growth mechanism control<br />

InAs/InP QWrs<br />

ε≅-3,3%<br />

2,2 ML éq.<br />

λ≅24nm<br />

1MLInAs = 3Å<br />

Fils : [1-10]<br />

[110]<br />

-<br />

[110]<br />

AFM<br />

19/50

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