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October 2000 Newsletter - Naval Postgraduate School

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RESEARCH CENTER<br />

RAD-HARD SEMICONDUCTOR CHIPS, continued from page 14<br />

components have been tested for strategic radiation levels.<br />

Additionally several of the newer programs, National Missile<br />

Defense (NMD) and TBM and many of the surveillance<br />

programs require radiation hardened-components. Further<br />

underground tests have been eliminated and many of the<br />

radiation testing facilities for weapons effects have been taken<br />

out of service.<br />

Technical Issues<br />

Each successive generation of transistors shrinks in size. Ten<br />

years ago each individual transistor “pushed” about 5-10<br />

million electrons from circuit node to circuit node. Today, the<br />

average transistor switches about 100,000 electrons. In the<br />

next 5 years or fewer, it will be 1,000 electrons. Cosmic<br />

particles from space or byproducts of radioactive isotopes in<br />

everyday materials interact with transistors and ionize millions<br />

of electrons. These “single particle” events are known as “soft<br />

errors” which randomly turn transistors on or off causing<br />

computer programs to fail. The density of cosmic particles at<br />

the earth’s surface is much less than in space (approximately<br />

10 cosmic particles pass through your body a day), however<br />

many more low energy particles exist than high energy ones at<br />

sea level, thus as each new generation is released the ICs<br />

become more susceptible to natural radiation. Before 1979,<br />

the relatively “large” transistors showed no susceptibility for<br />

single particle radiation anomalies, but each following<br />

generation has shown more problems. Unknown to most, at<br />

50,000 feet in the upper atmosphere a neutron cloud is<br />

produced from cosmic particle interaction. In the last two<br />

decades integrated circuits in avionics, and in computer<br />

systems at high elevations have shown increased susceptibility<br />

to natural radiation. Much closer to everyone’s desktop, in the<br />

last two years IBM and INTEL have had to switch completely<br />

to alpha particle-free solder due to prevent upsets from<br />

decaying isotopes in the lead solder. Studying the present<br />

roadmap for semiconductors, almost all ICs will become<br />

susceptible in the next decade to “natural” radiation. Imagine<br />

the difficulty for space and strategic system engineers to<br />

design for harsher radiation environments.<br />

In oxides, ionized electrons can get “trapped” in the insulator<br />

and over years (in space applications) or nanoseconds<br />

(weapons applications), charge builds up interfering with the<br />

transistor operation. This “total dose” of radiation to initiate<br />

failure is known as Total Dose and is in units of Rads(10 -7 J/<br />

gm). Rad-hard ICs are designed with special oxides that can<br />

withstand Megarads. Commercial ICs at best can survive to<br />

20K Rads. One recent worry from DSWA (Defense Special<br />

Weapon Agency) is that a rogue nation could launch one<br />

small nuclear weapon into the upper atmosphere, which<br />

could produce sufficient ionizing radiation to pump up the<br />

Van Allen radiation belts from underneath and engulf many<br />

of the Low Earth Orbit (LEO) satellites in radiation. Almost<br />

all commercial satellites at LEO utilize unhardened commercial<br />

parts. Such an event would cause hundreds of satellites to<br />

fail due to Total Dose effects within 30-60 days and this<br />

expanded radiation belt would last on the order of a year.<br />

Previous U.S. and Soviet upper atmosphere nuclear tests in<br />

the 50s and 60s reeked havoc on early satellite systems.<br />

Today’s semiconductor chips in some respects are more<br />

vulnerable, with many more satellites at stake.<br />

The same particles that can ionize electrons, with more<br />

energy these particles can displace atoms in a semiconductor<br />

crystal or in insulating oxides. Each displacement of an atom<br />

introduces a charged point defect, essentially an atom out of<br />

place in the crystal. In the near future, the capability of a<br />

single particles displacing one Oxygen or one Si atom in a sixto-eight<br />

atom thick Silicon Dioxide layer would permanently<br />

damage the transistor.<br />

--continued on page 16<br />

An example of a two-dimensional simulation of a cosmic<br />

particle ionizing charge in a MOSFET transistor. The<br />

simulation code allows researchers to track how ionized<br />

charge moves through a semiconductor structure.<br />

NPS Research page 15<br />

<strong>October</strong> <strong>2000</strong>

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