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Technical Design Report Super Fragment Separator

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DRAFT<br />

Figure 2.4.80: Beam induced fluorescence setup that has been used to measure beam profiles at the<br />

UNILAC accelerator. Uranium 28+ ions at 4.7 MeV/u with an intensity of 108 – 109 ions / macro-pulse can<br />

be detected.<br />

Beam catcher diagnostics system<br />

The beam catchers of the Pre-<strong>Separator</strong> are described in section 2.4.11.1. It is desirable to perform<br />

an on-line monitoring of the dumped beam intensity for security reasons. The simplest way would<br />

be to measure the transferred charge of the dumped ions directly by means of commercially<br />

available Ampere meters (current integrators), thus, use them as a Faraday cup. However, in<br />

practice this method becomes cumbersome for these rather extended movable and cooled devices.<br />

Apart from the optical methods already mentioned, where one could monitor the deposition of the<br />

primary beam intensity on the beam catcher, there is another option that recently became available<br />

and is subject to intense ongoing development.<br />

Diamond has superior material properties; a large thermal conductivity and high shock wave resistance<br />

that are ideally suited for their use in the hostile environment of the Pre-<strong>Separator</strong>.<br />

Commercially, artificially grown diamond films (CVD-D) are used as windows but became recently<br />

also available to build detectors. They are available as PolyCrystalline (PC) films, or even<br />

Single Crystal (SC) films, depending on how close the substrates properties, where they are grown<br />

on, are equal to the diamonds lattice. If nowadays, monolithic large area diamond detectors of a<br />

size > (8 x 8) mm 2 are needed, PC-CVD-D must be used. This material is available in wafers of up<br />

to 100 mm in diameter. High quality, i.e., Electronic Grade (EG) CVD-D can be used As Grown<br />

(AG) or polished to Detector Grade (DG) quality. AG CVD-D shows inhomogeneity in both, the<br />

charge collection efficiency which increases linearly along the crystals growth and the structure of<br />

the two opposite surfaces, i.e. a smooth substrate side with a bad charge collection efficiency and a<br />

rough growth side with a high efficiency. The average charge collection efficiency of AG PC<br />

diamond is 20 % - 40 %, meaning that more than half of the material thickness is electronically<br />

inactive. On the other hand this type of diamond provides the fastest detectors and, if needed, the<br />

thinnest free standing sensors. They can be ordered in layers of about 50�µm to 2 mm thickness. DG<br />

83

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