Conference Program - LOPE-C 2011
Conference Program - LOPE-C 2011
Conference Program - LOPE-C 2011
Create successful ePaper yourself
Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.
SCIENTIFIC CONF. | WEDNESDAY-JUNE 29, <strong>2011</strong><br />
Track 4<br />
Organic Transistors (02:30 pm - 04:00 pm) | LOCATION HARMONIE D / LEVEL C2<br />
03:40 pm Dynamic Characterization of Charge Injection and Transport by<br />
Mr Jack Lin,<br />
Tokyo Institute of Technology, Japan<br />
Semiconductor devices using organic materials, such as thin film transistors, light emitting diodes, and solar cells, have attracted a lot of research and commercial interests.<br />
The importance of basic research on the injection, accumulation, and transport mechanisms has also become more recognized to understand and improve the device<br />
performance. This paper introduces some enabling technologies that allow us to gain better understanding of the working mechanism of organic field-effect transistors<br />
(OFET), especially in the transient state.<br />
Direct imaging of carrier motion in OFET has been realized by the time-resolved microscopy optical second harmonic generation (TRM-SHG) technique, where the SHG<br />
light intensity is proportional to the square of the local electric field. The time resolved measurement was achieved by varying the delay time of the laser pulse in relation to<br />
the applied voltage precisely. By selecting the appropriate wavelength, the electric field induced SHG can be used to selectively probe the specific organic material of<br />
interest in complex multilayered systems. In this paper, we show results of carrier propagation in pentacene OFET obtained by TRM-SHG. Furthermore, contact resistance<br />
was also investigated by the potential drop which was directly evaluated from SHG.<br />
In combination with the electrical time-of-flight technique and impedance spectroscopy, along with conventional current-voltage measurements, it is possible to investigate<br />
the transient-state and steady-state behaviors of the OFET. The difference between these states is attributed to the filling of traps. Further study of the trapping states have<br />
been carried out by partially charging the gate-semiconductor interface (partially filling the traps) and investigating the device?s temperature dependence.<br />
Additionally, we introduce the newly developed technique to use time-resolved SHG for evaluation of carrier injection, recombination, and exciton generation processes in<br />
organic light-emitting diode and organic solar cells.<br />
04:00 pm COFFEE BREAK<br />
page 61