DSEP 12-12A - IXYS Power

HiPerFRED TM Epitaxial Diode
with soft recovery
VRSM VRRM Type
V V
1200 1200 DSEP 12-12A
Symbol Conditions Maximum Ratings
IFRMS 35 A
IFAVM TC = 125°C; rectangular, d = 0.5 15 A
IFSM TVJ = 45°C; tp = 10 ms (50 Hz), sine 90 A
EAS TVJ = 25°C; non-repetitive
IAS = 9 A; L = 180 µH
8.7 mJ
IAR VA = 1.25·VR typ.; f = 10 kHz; repetitive 0.9 A
T VJ -55...+175 °C
T VJM 175 °C
T stg -55...+150 °C
P tot T C = 25°C 95 W
M d mounting torque 0.4...0.6 Nm
Weight typical 2 g
Symbol Conditions Characteristic Values
typ. max.
IR ① TVJ = 25°C VR = VRRM 100 mA
TVJ = 150°C VR = VRRM 0.5 mA
VF ② IF = 15 A; TVJ = 150°C 1.79 V
TVJ = 25°C 2.75 V
RthJC 1.6 K/W
RthCH 0.5 K/W
trr IF = 1 A; -di/dt = 100 A/ms;
VR = 30 V; TVJ = 25°C
40 ns
IRM VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms
TVJ = 100°C
4.5 A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
Features
● International standard package
● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low I RM-values
● Soft recovery behaviour
● Epoxy meets UL 94V-0
Applications
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters
and motor control circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Inductive heating
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders
Advantages
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low
EMI/RFI
● Low I RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
© 2000 IXYS All rights reserved 1 - 2
A
C
TO-220 AC
C
A
DSEP 12-12A
IFAV = 15 A
VRRM = 1200 V
trr = 40 ns
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
008

I F
K f
Z thJC
40
A
35
30
25
20
15
10
5
2.0
1.5
1.0
0.5
0.0
0 40 80 120 °C 160
10
K/W
1
0.1
0.01
T =150°C
VJ
T =100°C
VJ
T = 25°C
VJ
T VJ
0.001
0.00001 0.0001 0.001 0.01 0.1 s 1
t
Fig. 7 Transient thermal resistance junction to case
NOTE: Fig. 2 to Fig. 6 shows typical values
Q r
t rr
3.0
�C
2.5
2.0
1.5
1.0
0.5
180
ns
160
140
120
T VJ = 100°C
V R = 600V
I F = 30A
I F = 15A
I F = 7.5A
T VJ = 100°C
V R = 600V
DSEP 12-12A
100
0
0.0
0 200 400 600 A/�s 800 1000
0 200 400 600 A/�s 800 1000
-di /dt F
diF /dt
Fig. 5 Recovery time t versus -di /dt rr F Fig. 6 Peak forward voltage V and t FR fr
versus di /dt F
© 2000 IXYS All rights reserved 2 - 2
DSEP 12-12A
I RM
V FR
50
A
40
30
20
10
120
V
80
40
T VJ = 100°C
V R = 600V
I F = 30A
I F = 15A
I F = 7.5A
0
0.0
0
0 1 2 3 V 4
100 A/�s 1000
0 200 400 600 A/�s 800 1000
VF -di /dt F -diF /dt
Fig. 1 Forward current I versus V F F Fig. 2 Reverse recovery charge Qr versus -di /dt F
Fig. 3 Peak reverse current IRM versus -di /dt F
I RM
Q r
Fig. 4 Dynamic parameters Q r , I RM
versus T VJ
I F = 30A
I F = 15A
I F = 7.5A
t fr
T VJ = 100°C
I F = 15A
V FR
Constants for Z thJC calculation:
i R (K/W) thi t (s) i
1 0.9084 0.0052
2 0.3497 0.0003
3 0.3419 0.0165
1.2
µs
0.8
0.4
t fr
008