Derwent World Patents Index (DWPI) - EPI ... - Thomson Reuters
Derwent World Patents Index (DWPI) - EPI ... - Thomson Reuters
Derwent World Patents Index (DWPI) - EPI ... - Thomson Reuters
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1144 Subject <strong>Index</strong><br />
simulation U11-F01<br />
U11-G<br />
testing, at wafer or die level S01-G02B1<br />
U11-F01D<br />
testing, completed (encapsulated) S01-G02B5<br />
U11-F01C<br />
unipolar U12-D02<br />
Semiconductor devices, interconnections<br />
- see Interconnections for<br />
semiconductor devices<br />
Semiconductor film measurement U11-F01B<br />
by beam scanning U11-F01B2<br />
during processing U11-F01B1<br />
in reaction vessel U11-F01B1<br />
optical/electron microscopic examination<br />
U11-F01B4<br />
thickness U11-F01B5<br />
using image recognition U11-F01B3<br />
Semiconductor inductor U12-C03B<br />
Semiconductor lasers U12-A01B<br />
V08-A04A<br />
arrays U12-A01B1J<br />
V08-A04A<br />
V08-A07<br />
bias circuit U12-A01B4<br />
V08-A02A<br />
characterised by material (excludes<br />
AIII-BV compounds) U12-A01B6<br />
V08-A01D<br />
V08-A04A<br />
connection to optical fibre U12-A01C<br />
V07-G10C<br />
control circuitry U12-A01B4<br />
V08-A03<br />
V08-A04A<br />
distributed feedback U12-A01B1<br />
V08-A04A<br />
drive circuitry U12-A01B4<br />
V08-A04A<br />
V08-A02A<br />
electrode formation U11-C05F6<br />
heterojunction U12-A01B1A<br />
V08-A01A<br />
V08-A04A<br />
heterojunction, double U12-A01B1B1<br />
homojunction U12-A01B1<br />
manufacture U12-A01B2<br />
V08-A04A<br />
packages U12-A01B3<br />
V08-A04A<br />
packages with cooling arrangements<br />
U12-A01B3A<br />
V08-A04A<br />
V08-A05<br />
ridge waveguide U12-A01B1A<br />
V08-A01A<br />
V08-A04A<br />
with quantum well U12-A01B1B<br />
V08-A01A<br />
V08-A04A<br />
Semiconductor materials U11-A01<br />
AI-BIII-CVI compounds U11-A01X<br />
AII-BIV-CV compounds U11-A01X<br />
AII-BVI compounds U11-A01C<br />
AIII-BV compounds U11-A01B<br />
AIV elements, compounds U11-A01D<br />
AIV-BVI compounds U11-A01X<br />
chemical analysis U11-F01A5<br />
for layer deposition U11-C01J<br />
organic U11-A01F<br />
silicon U11-A01A<br />
silicon, porous U11-A01A1<br />
Semiconductor memories U14-A<br />
U13-C04<br />
Semiconductor on insulator - see SOI<br />
Semiconductor processing U11-C<br />
AII-BVI compounds, doping U11-C02J1B<br />
AII-BVI compounds, etching U11-C07C4B<br />
AII-BVI compounds, layer deposition<br />
U11-C01J3B<br />
AII-BVI compounds, treatment U11-C03J8B<br />
AIII-BV compounds, etching U11-C07C4A<br />
AIII-BV compounds, layer deposition<br />
U11-C01J3A<br />
AIII-BV compounds, treatment U11-C03J8A<br />
AIV element/compound, etching U11-C07C4C<br />
AIV elements and compounds, doping<br />
U11-C02J1C<br />
AIV elements and their compounds,<br />
treatment U11-C03J8C<br />
AIV elements, compounds, layer deposition<br />
U11-C01J4A<br />
annealing U11-C03J2A<br />
beam treatment U11-C03B<br />
chemical analysis U11-F01A5<br />
chemical vapour deposition appts. U11-C09B<br />
chemical vapour deposition, insulating<br />
layer U11-C05B2<br />
chemical vapour deposition,<br />
semiconductor layer U11-C01B<br />
conductive layer etching U11-C07C2<br />
conductive layer formation U11-C05C<br />
deposition of semiconductor layer U11-C01<br />
doping U11-C02<br />
electrical treatment U11-C03C<br />
etching U11-C07<br />
etching techniques U11-C07D<br />
etching, silicon layer U11-C07C1<br />
gettering U11-C03J2B<br />
heat treatment appts. U11-C03A<br />
IC copying and use protection U11-C19B<br />
insulating layer etching U11-C07C3<br />
interconnection formation U11-C05D<br />
laser treatment U11-C03D<br />
layer formation U11-C05<br />
lithography U11-C04<br />
localised beam treatment U11-C03J5<br />
localised radiation treatment U11-C03J5<br />
manufacturing control (general) U11-C15D<br />
multi-chamber appts. U11-C09M<br />
nitridation U11-C05B1<br />
optical/electron microscopic examination<br />
U11-F01B4<br />
oxidation U11-C05B1<br />
packaging U11-D01<br />
physical deposition U11-C01A<br />
physical deposition, insulating layer U11-C05B2<br />
plasma apparatus U11-C09C<br />
V05-F05C<br />
X14-F02<br />
plasma treatment U11-C03C<br />
process control U11-C15C<br />
process simulation U11-C15C
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