European Patent Bulletin 2012/09 - European Patent Office
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(H01L) I.1(2)<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 31.08.2010 JP 2010195205<br />

(54) Röntgenbildgebungsvorrichtung<br />

Radiographic imaging device<br />

Dispositif dýimagerie radiographique<br />

(71) Fujifilm Corporation, 26-30 Nishiazabu 2chome,<br />

Minato-ku Tokyo, JP<br />

(72) Okada, Yoshihiro, Kanagawa, JP<br />

(74) Klunker . Schmitt-Nilson . Hirsch, <strong>Patent</strong>anwälte<br />

Destouchesstrasse 68, 80796 München,<br />

DE<br />

(51) H01L 27/146 (11) 2 423 962 A1<br />

H04N 5/361<br />

(25) En (26) En<br />

(21) 11183469.3 (22) 05.12.2007<br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HU IE IS IT LI LT LU LV MC MT NL PL<br />

PT RO SE SI SK TR<br />

(30) 19.03.2007 DK 200700417<br />

(54) Digitalbildsensorsystem mit langer Belichtung<br />

Long exposure digital image sensor<br />

system<br />

Système de capteur d'image numérique à<br />

longue exposition<br />

(71) Phase One A/S, Roskildevej 39, 2000<br />

Frederiksberg, DK<br />

(72) Andersen, Thomas, 4600 Køge, DK<br />

(74) Plougmann & Vingtoft A/S, Sundkrogsgade<br />

9 P.O. Box 831, 2100 Copenhagen Ø, DK<br />

(62) 07846443.5 / 2 137 959<br />

H01L 27/15 → (51) G02B 5/30<br />

(51) H01L 27/24 (11) 2 423 963 A2<br />

H01L 45/00 G11C 13/00<br />

(25) En (26) En<br />

(21) 11175374.5 (22) 26.07.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 31.08.2010 KR 20100084970<br />

(54) Nichtflüchtige Speicherelemente und<br />

Speichervorrichtungen damit<br />

Non-volatile memory elements and<br />

memory devices including the same<br />

Éléments de mémoire non volatile et<br />

dispositifs de mémoire l'incluant<br />

(71) Samsung Electronics Co., Ltd., 416, Maetandong<br />

Yeongtong-gu, Suwon-si, Gyeonggi-do<br />

442-742, KR<br />

(72) Lee, Chang-bum, 449-712 Gyeonggi-do, KR<br />

Kim, Chang-jung, 449-712 Gyeonggi-do, KR<br />

Kim, Young-bae, 449-712 Gyeonggi-do, KR<br />

Lee, Myoung-jae, 449-712 Gyeonggi-do, KR<br />

Hur, Ji-hyun, 449-712 Gyeonggi-do, KR<br />

Lee, Dong-soo, 449-712 Gyeonggi-do, KR<br />

Chang, Man, 449-712 Gyeonggi-do, KR<br />

Lee, Seung-ryul, 449-712 Gyeonggi-do, KR<br />

(74) Greene, Simon Kenneth, Elkington and Fife<br />

LLP Prospect House 8 Pembroke Road,<br />

Sevenoaks Kent TN13 1XR, GB<br />

(51) H01L 27/32 (11) 2 423 964 A1<br />

H01L 51/52<br />

(25) En (26) En<br />

(21) 11177621.7 (22) 16.08.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 23.08.2010 KR 20100081505<br />

Europäisches <strong>Patent</strong>blatt<br />

<strong>European</strong> <strong>Patent</strong> <strong>Bulletin</strong><br />

<strong>Bulletin</strong> européen des brevets<br />

(54) Organische lichtemittierende Diodenanzeige<br />

Organic light emitting diode display<br />

Affichage à diode électroluminescente<br />

organique<br />

(71) Samsung Mobile Display Co., Ltd., San 24<br />

Nongseo-Dong Giheung-Gu Yongin-City,<br />

Gyunggi-Do 446-711, KR<br />

(72) Jeong, Hee-Seong, 446-711 Gyunggi-do, KR<br />

Park, Soon-Ryong, 446-711 Gyunggi-Do, KR<br />

(74) Gulde Hengelhaupt Ziebig & Schneider, <strong>Patent</strong>anwälte<br />

- Rechtsanwälte Wallstraße 58/<br />

59, 10179 Berlin, DE<br />

H01L 29/24 → (51) H01L 29/78<br />

H01L 29/423 → (51) H01L 21/28<br />

H01L 29/49 → (51) H01L 21/336<br />

(51) H01L 29/78 (11) 2 423 965 A1<br />

H01L 29/24<br />

(25) En (26) En<br />

(21) 10008902.8 (22) 27.08.2010<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO SE SI SK SM TR<br />

BA ME RS<br />

(54) Elektrochemischer Transistor und Verfahren<br />

zu dessen Herstellung<br />

Electrochemically-gated transistor and a<br />

method for its manufacture<br />

Transistor commuté électro-chimiquement<br />

et son procédé de fabrication<br />

(71) Karlsruher Institut für Technologie, Kaiserstrasse<br />

12, 76131 Karlsruhe, DE<br />

(72) Hahn, Horst, Prof. Dr., 64342 Seeheim-Jugenheim,<br />

DE<br />

Dasgupta, Subho, Dr., 76344 Eggenstein-<br />

Leopoldshafen, DE<br />

Kruk, Robert, Dr., 76344 Eggenstein-Leopoldshafen,<br />

DE<br />

(74) Gärtner, Stephan, Karlsruher Institut für<br />

Technologie Innovationsmanagement Postfach<br />

36 40, 76021 Karlsruhe, DE<br />

(51) H01L 29/786 (11) 2 423 966 A1<br />

(25) En (26) En<br />

(21) 110<strong>09</strong>3<strong>09</strong>.3 (22) 03.12.20<strong>09</strong><br />

(84) AT BE BG CH CY CZ DE DK EE ES FI FR GB<br />

GR HR HU IE IS IT LI LT LU LV MC MK MT<br />

NL NO PL PT RO SE SI SK SM TR<br />

(30) 12.12.2008 JP 2008317286<br />

28.<strong>09</strong>.20<strong>09</strong> JP 20<strong>09</strong>222514<br />

(27) 12.12.2008 EP <strong>09</strong>014995<br />

(54) Feldeffekttransistor und Display-Apparat<br />

Field effect transistor and display<br />

apparatus<br />

Transistor à effet de champ et appareil<br />

d'affichage<br />

(71) CANON KABUSHIKI KAISHA, 30-2, Shimomaruko<br />

3-chome Ohta-ku, Tokyo, JP<br />

(72) Ueda, Miki, Tokyo, JP<br />

Iwasaki, Tatsuya, Tokyo, JP<br />

Itagaki, Naho, Tokyo, JP<br />

Goyal, Amita, Tokyo, JP<br />

(74) Weser, Thilo, Weser & Kollegen <strong>Patent</strong>anwälte<br />

Radeckestrasse 43, 81245 München,<br />

DE<br />

(62) <strong>09</strong>014995.6 / 2 197 034<br />

H01L 29/786 → (51) C<strong>09</strong>B 47/04<br />

H01L 29/786 → (51) H01L 21/336<br />

H01L 29/788 → (51) H01L 21/28<br />

H01L 31/00 → (51) C03C 17/00<br />

347<br />

Anmeldungen<br />

Applications<br />

Demandes (<strong>09</strong>/<strong>2012</strong>) 29.02.<strong>2012</strong><br />

H01L 31/00 → (51) G05F 3/26<br />

H01L 31/00 → (51) H01L 27/14<br />

H01L 31/02 → (51) H01L 31/048<br />

(51) H01L 31/0224 (11) 2 423 967 A2<br />

(25) En (26) En<br />

(21) 11151969.0 (22) 25.01.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 25.08.2010 KR 20100082577<br />

(54) Solarzelle und Herstellungsverfahren dafür<br />

Solar cell and method of manufacturing<br />

the same<br />

Cellule solaire et son procédé de fabrication<br />

(71) SAMSUNG ELECTRONICS CO., LTD., 416,<br />

Maetan-dong, Yeongtong-gu, Suwon-si,<br />

Gyeonggi-do, KR<br />

Samsung SDI Co., Ltd., 428-5, Gongse-dong<br />

Giheung-gu Yongin-si, Gyeonggi-do, KR<br />

(72) Xianyu, Wenxu, Gyeonggi-do, KR<br />

Park, Yong-Young, Daejeon, KR<br />

Kim, Yeon-Hee, Seoul, KR<br />

Yang, Woo-Young, Gyeonggi-do, KR<br />

Kim, Hyun-Jong, Seoul, KR<br />

(74) Taor, Simon Edward William, et al, Marks &<br />

Clerk LLP 90 Long Acre, London WC2E 9RA,<br />

GB<br />

(51) H01L 31/0224 (11) 2 423 968 A2<br />

H01L 31/18<br />

(25) En (26) En<br />

(21) 11178015.1 (22) 18.08.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 27.08.2010 US 870055<br />

(54) Anisotrope Leitschicht als Rückkontakt in<br />

Dünnfilmfotovoltaikvorrichtungen<br />

Anisotropic conductive layer as a back<br />

contact in thin film photovoltaic devices<br />

Couche conductrice anisotrope en tant<br />

que contact arrière dans des dispositifs<br />

photovoltaïques à couche mince<br />

(71) PrimeStar Solar, Inc, 14401 West 65th Way<br />

Unit B, Arvada, CO 80004, US<br />

(72) Lucas, Tammy Jane, Arvada, CO Colorado<br />

80004, US<br />

Gossman, Robert Dwayne, Arvada, CO<br />

Colorado 80004, US<br />

Feldman-Peabody, Scott Daniel, Arvada, CO<br />

Colorado 80004, US<br />

(74) Szary, Anne Catherine, GE International Inc.<br />

Global <strong>Patent</strong> Operation - Europe 15 John<br />

Adam Street, London WC2N 6LU, GB<br />

(51) H01L 31/0224 (11) 2 423 969 A2<br />

(25) En (26) En<br />

(21) 11178016.9 (22) 18.08.2011<br />

(84) AL AT BE BG CH CY CZ DE DK EE ES FI FR<br />

GB GR HR HU IE IS IT LI LT LU LV MC MK<br />

MT NL NO PL PT RO RS SE SI SK SM TR<br />

BA ME<br />

(30) 27.08.2010 US 870<strong>09</strong>2<br />

(54) Verfahren zur Herstellung einer anisotropen<br />

leitfähigen Schicht als Rückseitenkontakt<br />

in Dünnschichtfotovoltaikvorrichtungen<br />

Methods of forming an anisotropic<br />

conductive layer as a back contact in thin<br />

film photovoltaic devices<br />

Procédés de formation d'une couche<br />

conductrice anisotrope en tant que

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