18.12.2012 Views

Deutsche Tagung f ¨ur Forschung mit ... - SNI-Portal

Deutsche Tagung f ¨ur Forschung mit ... - SNI-Portal

Deutsche Tagung f ¨ur Forschung mit ... - SNI-Portal

SHOW MORE
SHOW LESS

Create successful ePaper yourself

Turn your PDF publications into a flip-book with our unique Google optimized e-Paper software.

Materialien/Werkstoffe Poster: Do., 13:00–15:30 D-P406<br />

Internal drift effects explaining anomalous diffusion profiles of Ag in CdTe<br />

Frank Wagner 1 , Jörg Kronenberg 1 , Herbert Wolf 1 , Manfred Deicher 1 ,<br />

Karl Johnston 1 , Thomas Wichert 1 , ISOLDE Collaboration 2<br />

1 Technische Physik, Universität des Saarlandes, D-66041 Saarbrücken, Germany –<br />

2 CERN, CH-1211 Geneva 23, Switzerland<br />

Anomalous concentration profiles have been observed upon diffusion of Ag in CdTe<br />

[1]. The diffusion experiments were performed with the radiotracers 111 Ag implanted<br />

at ISOLDE into one side of a typically 800 µm thick CdTe crystal at a depth of about<br />

30 nm. The resulting diffusion profiles of Ag extending over the whole crystal critically<br />

depend on the respective external conditions during diffusion and on the sample<br />

pre-treatments (see figure): After diffusing the Ag dopant into the CdTe crystal at 800<br />

K (60 min) under Cd pressure or vacuum the symmetrical concentration profiles show<br />

depletion layers of 100 or 300 µm below the surfaces of the crystal, whereby the depletion<br />

layers are much stronger pronounced in case of diffusion under Cd pressure. In<br />

contrast, the Ag concentration is increased at the surface and decreased in the interior<br />

of the crystal if the diffusion is performed under Te pressure. These anomalous Ag profiles<br />

are well described within a model based on an interaction of the Ag dopant atoms<br />

with the intrinsic defects of the Cd sublattice of CdTe taking into account the charge<br />

states of all participating defects. It turns out that the diffusion of Ag is significantly<br />

affected by an internal drift due to the electric field generated by the distribution of the<br />

charged defects. In addition, the influence of Cu, Au, and In on the diffusion of Ag<br />

in CdTe was investigated. Thus, evaporating a thin Cu layer on the 111 Ag implanted<br />

side of a CdTe single crystal and subsequent annealing at 550 K for 30 min effects that<br />

most of the Ag atoms were detected in a thin layer of only a few µm at the back of a<br />

500 µm thick crystal.<br />

This work has been supported by the Bundesministerium für Bildung und <strong>Forschung</strong><br />

(BMBF) under Contract Nos. 05 KK1TSB/5 and CZE 03/002.<br />

[1] H. Wolf, F. Wagner, Th. Wichert, and ISOLDE Collaboration, Phys. Rev. Lett.<br />

94 (2005) 125901.

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!