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Nanostrukturen und Grenzflächen Poster: Do., 13:00–15:30 D-P319
Soft X-Ray studies on the system hafnium on Si(100)
Daniel Weier 1,2 , Abner de Siervo 3,4 , Christian Flüchter 1,2 , Mark
Schürmann 1 , Stefan Dreiner 1 , Ulf Berges 1,2 , Marcelo Carazzolne 4 ,
Richard Landers 3,4 , George Kleiman 4 , Carsten Westphal 1,2
1 Experimentelle Physik 1 - Universität Dortmund, Otto-Hahn-Str.4, D 44221 Dortmund,
Germany – 2 DELTA - Universität Dortmund, Maria-Göppert-Mayer-Str. 2,
D 44227 Dortmund, Germany – 3 Laboratório Nacional de Luz Sincrotron, C.P. 6192,
13084-971 Campinas, SP, Brazil – 4 Instituto de Fisica - Universidade Estadual de
Campinas, C.P. 6165, 13083-970 Campinas, SP, Brazil
Presently, there are many higk-k candidates discussed as a substitute for SiO2 as the
gate dielectric in the silicon based CMOS (Complementary-MetalOxide-Semiconductors)
technology. One of the most promising candidates is HfO2 [1]. The thermal stability of
the new gate dielectric is one of the most difficult issues to solve. Recent publications
[2] report the formation of hafnium silicide at the HfO2 interface at high temperature
annealing. Due to this fact it is interessting to get more information about the the formation
of HfSi on Si and to understand the structure and the interface of this system.
In this work ultrathin films of HfSi on Si(100) were prepared and studied by X-ray
photoelectron spectroscopy (XPS) and X-ray photoelectron diffraction (XPD). The
measurements were performed at the beamlines 5 and 11 at the synchrotron facility
DELTA (Dortmund). The experimental results are compared to calculated patterns by
an R-factor analysis. We present a possible model of the structure of HfSi on Si(100).
[1] C.J. Först, C.R. Ashman, K. Schwarz and P. Blöchl, Nature 427, 53 (2004)
[2] N. Miyata et al., Phys. Rev. B 71, 233302 (2005)