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Nanostrukturen und Grenzflächen Poster: Do., 13:00–15:30 D-P281<br />

X-ray study of ion-induced surface ripples in Si<br />

Souren Grigorian 1 , Joerg Grenzer 2 , Andreas Biermanns 1 , Ullrich Pietsch 1 ,<br />

Milan Sanyal 3 , Tapas Chini 3 , Satyajit Hazra 3<br />

1 Institute of Physics, University of Siegen,Walter Flex 3, 57078 Siegen, Germany –<br />

2 Institute of Ion Beam Physics and Materials Research,Bautzner Landstrasse 128,<br />

D-01328 Dresden, Germany – 3 Surface Physics Division, Saha Institute of Nuclear<br />

Physics, 1/AF Bidhannagar, Kolkata 700 064, India<br />

Nanopattering at the metal and semiconductor surfaces by ion-beam irradiation has<br />

attracted significant technological interest due to possibility for the fabrication of novel<br />

nanodevices [1,2]. Recently has been shown, that structural features of the irradiated<br />

Si crystals and, especially, crystalline ripples can be studied at the 3rd generation synchrotron<br />

radiation sources [3]. In particular, the near-surface ripples pattern can be<br />

characterized by depth resolved x-ray grazing incidence diffraction (GID). The GID<br />

intensity profiles show the presence of satellite peaks on both sides of the main (220)<br />

Bragg peak. The appearance of satellite peaks confirms the existence of lateral undulation<br />

of the buried crystalline part of the sample. Additionally to the crystalline part, the<br />

amorphization process is very important to understand an amorphous-crystalline interfacial<br />

and a ripple formation mechanism. Amorphization features depending on the<br />

irradiation dose were probed by means of x-ray grazing amorphous scattering (GIAS).<br />

Two broad peaks of the GIAS profiles indicate short-range ordering of amorphous material<br />

of the irradiated samples. GIAS profiles taken under different azimuthal angles<br />

display a strong anisotropy of the amorphous scattering. A strong damage of crystalline<br />

structures takes place along particular crystallographic directions at low doses<br />

of irradiation. A complete, mostly uniform amorphization is eminent at high doses of<br />

irradiation. This mechanism can be used for a better understanding of the formation<br />

of subsurface amorphous-crystalline ripples.<br />

We would like to thank ID beamline staff for the support at ESRF. This work was<br />

supported by the DST-DAAD India-Germany Collaborative Program.<br />

[1] T. Aste and U. Valbusa, New Journal of Physics 7 (2005) 122.<br />

[2] C.Hofer, S. Abermann, C. Teichert, T. Bobek, H. Kurz, K. Lyutovich, E. Kasper<br />

Nuc. Inst. and Meth. in Phys. Res. B. 216 (2004) 178.<br />

[3] S. Hazra, T. K. Chini, and M. K. Sanyal, Grenzer J and Pietsch U Phys. Rev. B<br />

70 (2004) 121307.

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