Deutsche Tagung f ¨ur Forschung mit ... - SNI-Portal

Methoden und Instrumentierung Poster: Mi., 14:00–16:30 M-P4
Microdiffraction Imaging of Semiconductor Materials
Tilo Baumbach 1 , Daniel Lübbert 1 , Petr Mikulik 3 , Lukas Helfen 2 , Petra
Pernot 2 , Christoph Landesberger 4 , Juergen Schreiber 5 , Stacia Keller 6 ,
Steven P. Den Baars 6 , Jose Baruchel 2
1 ANKA / Institute for Synchrotron Radiation, Forschungszentrum Karlsruhe GmbH,
P.O. Box 36 40, D-76021 Karlsruhe, Germany – 2 European Synchrotron Radiation
Facility, F-38043 Grenoble – 3 Masaryk University, Kotlarska 2, 61137 Brno, Czech
Republic – 4 Fraunhofer Institute for Reliability and Microintegration, D-80686 Munich,
Germany – 5 Fraunhofer Institute for Nondestructive Testing, D-01326 Dresden,
Germany – 6 University of California, Santa Barbara, California 93106
We report on a method for microstructural characterization and quality control of
single-crystalline materials and epitaxial devices in microelectronics and micro system
technology.
The parallel-beam X-ray microdiffraction imaging technique realizes spatial resolution
on a µm scale. The method is based on a combination of x-ray rocking curve
analysis and digital X-ray diffraction topography. Back projection and multi peak
analysis of local rocking curves allow full field mapping of microdiffraction properties.
Segmentation procedures and 2D and 3D reconstruction of characteristic parameters
provide convenient means to monitor the local crystalline quality in semiconductor
microstructures.
The development and production of highly perfect semiconductor materials and their
application in components in various branches of microelectronics and micro system
technology require information on their structural perfection. Of crucial importance
are structural properties and their relations to technological steps. Moreover, the investigation
of structure-property relationships for the components, from semiconductor
substrate up to the final component, e. g. the completed laser or integrated circuit,
and beyond to the entire device, e. g. the single photon counting pixel detector arrays,
the finished PCB-unit or hybrid circuit, is needed.
We demonstrate the principles of imaging and reconstruction of the full field microdiffraction
imaging method and its instrumental realization. We illustrate the potential
for technologically relevant applications by examples of non-destructive testing
for Thin Chip technology - Vertical System Integration by vertical interchip bonding
Wafer technology - macrodefects and dislocation density mapping in GaAs and InP
GaN - technology - virtual substrates for blue laser diodes by GaN Epitaxial Lateral
Overgrowth on sapphire and SiC Flip-Chip technology strain and damage induced by
the interconnection technology Direct converting x-ray detectors - strain and defect
analysis and others.