"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
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Tris(trimethylsilyl)silane 59<br />
C(O)Cl<br />
(TMS) 3 SiH<br />
AIBN, 80 �C<br />
90%<br />
4.3.2 REDUCTIVE REMOVAL OF CHALCOGEN GROUPS<br />
(RS AND RSe)<br />
(4.19)<br />
The removal <strong>of</strong> PhS from n-C10H21 w SPh by (TMS) 3SiH is a sluggish reaction,<br />
the reason probably be<strong>in</strong>g that the displacement <strong>of</strong> a primary alkyl radical by<br />
(TMS) 3Si: radical is not an efficient step, <strong>in</strong> accordance with the available upper<br />
limit rate constant (Table 4.3) [43]. However, the reaction changes its efficiency<br />
when the result<strong>in</strong>g carbon-centred radicals are further stabilized by an a heteroatom.<br />
<strong>In</strong>deed, (TMS) 3SiH can <strong>in</strong>duce the efficient radical cha<strong>in</strong> monoreduction<br />
<strong>of</strong> 1,3-dithiolanes, 1,3-dithianes, 1,3-oxathiolanes, 1,3-oxathiolanones and<br />
1,3-thiazolid<strong>in</strong>es derivatives [44–46]. Three examples are outl<strong>in</strong>ed <strong>in</strong> Reaction<br />
(4.20). The (TMS) 3Si group <strong>in</strong>corporated <strong>in</strong> the adducts could be conveniently<br />
deprotected with fluoride ions generat<strong>in</strong>g a thiolate anion which could be used<br />
for further synthetic transformations [47]. The reduction <strong>of</strong> chiral 1,3-thiazolid<strong>in</strong>e<br />
derivatives (as 1:1 mixture <strong>of</strong> diastereoisomers) was used as a model for<br />
study<strong>in</strong>g the stereoselectivity <strong>in</strong> the hydrogen abstraction <strong>of</strong> a-am<strong>in</strong>oalkyl radicals<br />
[48]. These <strong>in</strong>termediates abstract a hydrogen atom giv<strong>in</strong>g different anti/syn<br />
ratios, depend<strong>in</strong>g on the substituents. An example is given <strong>in</strong> Reaction (4.21).<br />
Table 4.3 Rate constants at 20 8C for the reaction <strong>of</strong> (TMS) 3Si:<br />
radicals with a variety <strong>of</strong> substrates [43]<br />
Substrate k=M 1 s 1<br />
RCH2SPh < 5 106 RCH2SePh 9:6 107 RCH2C(O)SePh 2 108a c-C6H11OC(S)SPh 1:1 109 c-C6H11NC 4:7 107 (CH3) 3CNO2 1:2 107 a At 80 8C.<br />
X S (TMS) 3SiH AIBN, 80 �C<br />
X S Si(TMS) 3<br />
X = S 85%<br />
X = O 84%<br />
X = NC(O)OEt 79%<br />
(4.20)