"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
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Tris(trimethylsilyl)silane 57<br />
A good diastereocontrol is obta<strong>in</strong>ed for the debrom<strong>in</strong>ation <strong>of</strong> Reaction (4.14)<br />
and it is attributed to the bulky reduc<strong>in</strong>g agent, which approaches the radical<br />
<strong>in</strong>termediate from the less h<strong>in</strong>dered face anti to the two vic<strong>in</strong>al substituents [35].<br />
EtO<br />
O<br />
Br<br />
(TMS) 3 SiH<br />
Et 3B, O 2, −78 �C<br />
EtO<br />
O<br />
+<br />
4:1<br />
EtO<br />
O<br />
(4.14)<br />
The reduction <strong>of</strong> bromides bear<strong>in</strong>g a b-sulf<strong>in</strong>yl group by (TMS) 3SiH is an<br />
emerg<strong>in</strong>g method for the preparation <strong>of</strong> substituted allenes. Reaction (4.15) was<br />
tested with different a-bromo v<strong>in</strong>yl sulfoxides and yields ranged from satisfactory<br />
to good ones [36]. The reaction <strong>in</strong>volves a brom<strong>in</strong>e atom removal followed<br />
by b-elim<strong>in</strong>ation <strong>of</strong> a sulf<strong>in</strong>yl radical. The use <strong>of</strong> large excess <strong>of</strong> <strong>in</strong>itiator suggests<br />
that these transformations do not <strong>in</strong>volve a properly ma<strong>in</strong>ta<strong>in</strong>ed radical cha<strong>in</strong>.<br />
R 1<br />
R<br />
S(O)Ar<br />
Br<br />
(TMS) 3SiH<br />
AIBN (1 equiv), 80 �C<br />
R 1<br />
R<br />
30-80%<br />
(4.15)<br />
(TMS) 3SiH can be also used as a reagent for driv<strong>in</strong>g the reduction <strong>of</strong> iodides<br />
and bromides through a radical mechanism together with sodium borohydride,<br />
the reductant that is consumed [37]. For example, 1-bromonaphthalene is<br />
treated with an excess <strong>of</strong> NaBH4 (50 equiv) and a small amount <strong>of</strong><br />
(TMS) 3SiH (0.1 equiv), under photochemical <strong>in</strong>itiation conditions, to give the<br />
reduced product <strong>in</strong> 88 % yield.<br />
For tertiary, secondary, and primary chlorides the reduction becomes <strong>in</strong>creas<strong>in</strong>gly<br />
difficult due to shorter cha<strong>in</strong> lengths. On the other hand, the replacement<br />
<strong>of</strong> a chlor<strong>in</strong>e atom by hydrogen <strong>in</strong> polychlor<strong>in</strong>ated substrates is much<br />
easier. Table 4.2 shows the rate constants for the reaction <strong>of</strong> (TMS) 3Si: radical<br />
with some chlorides [32]. The comparison with the analogous data <strong>of</strong> Table 4.1<br />
shows that for benzyl and tertiary alkyl substituents the chlor<strong>in</strong>e atom abstraction<br />
is 2–3 orders <strong>of</strong> magnitude slower than for the analogous bromides.<br />
Table 4.2 Rate constants at 20 8C for the reaction <strong>of</strong> (TMS) 3Si:<br />
radicals with some chlorides [32]<br />
Chloride k=M 1 s 1<br />
CCl4 1:7 10 8<br />
CHCl3 6:8 10 6<br />
PhCH2Cl 4:6 10 6<br />
CH3(CH2) 5C(CH3) 2Cl 4:0 10 5<br />
RCH2C(O)Cl 7 10 5a<br />
a At 80 8C.