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"Front Matter". In: Organosilanes in Radical Chemistry - Index of

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Tris(trimethylsilyl)silane 57<br />

A good diastereocontrol is obta<strong>in</strong>ed for the debrom<strong>in</strong>ation <strong>of</strong> Reaction (4.14)<br />

and it is attributed to the bulky reduc<strong>in</strong>g agent, which approaches the radical<br />

<strong>in</strong>termediate from the less h<strong>in</strong>dered face anti to the two vic<strong>in</strong>al substituents [35].<br />

EtO<br />

O<br />

Br<br />

(TMS) 3 SiH<br />

Et 3B, O 2, −78 �C<br />

EtO<br />

O<br />

+<br />

4:1<br />

EtO<br />

O<br />

(4.14)<br />

The reduction <strong>of</strong> bromides bear<strong>in</strong>g a b-sulf<strong>in</strong>yl group by (TMS) 3SiH is an<br />

emerg<strong>in</strong>g method for the preparation <strong>of</strong> substituted allenes. Reaction (4.15) was<br />

tested with different a-bromo v<strong>in</strong>yl sulfoxides and yields ranged from satisfactory<br />

to good ones [36]. The reaction <strong>in</strong>volves a brom<strong>in</strong>e atom removal followed<br />

by b-elim<strong>in</strong>ation <strong>of</strong> a sulf<strong>in</strong>yl radical. The use <strong>of</strong> large excess <strong>of</strong> <strong>in</strong>itiator suggests<br />

that these transformations do not <strong>in</strong>volve a properly ma<strong>in</strong>ta<strong>in</strong>ed radical cha<strong>in</strong>.<br />

R 1<br />

R<br />

S(O)Ar<br />

Br<br />

(TMS) 3SiH<br />

AIBN (1 equiv), 80 �C<br />

R 1<br />

R<br />

30-80%<br />

(4.15)<br />

(TMS) 3SiH can be also used as a reagent for driv<strong>in</strong>g the reduction <strong>of</strong> iodides<br />

and bromides through a radical mechanism together with sodium borohydride,<br />

the reductant that is consumed [37]. For example, 1-bromonaphthalene is<br />

treated with an excess <strong>of</strong> NaBH4 (50 equiv) and a small amount <strong>of</strong><br />

(TMS) 3SiH (0.1 equiv), under photochemical <strong>in</strong>itiation conditions, to give the<br />

reduced product <strong>in</strong> 88 % yield.<br />

For tertiary, secondary, and primary chlorides the reduction becomes <strong>in</strong>creas<strong>in</strong>gly<br />

difficult due to shorter cha<strong>in</strong> lengths. On the other hand, the replacement<br />

<strong>of</strong> a chlor<strong>in</strong>e atom by hydrogen <strong>in</strong> polychlor<strong>in</strong>ated substrates is much<br />

easier. Table 4.2 shows the rate constants for the reaction <strong>of</strong> (TMS) 3Si: radical<br />

with some chlorides [32]. The comparison with the analogous data <strong>of</strong> Table 4.1<br />

shows that for benzyl and tertiary alkyl substituents the chlor<strong>in</strong>e atom abstraction<br />

is 2–3 orders <strong>of</strong> magnitude slower than for the analogous bromides.<br />

Table 4.2 Rate constants at 20 8C for the reaction <strong>of</strong> (TMS) 3Si:<br />

radicals with some chlorides [32]<br />

Chloride k=M 1 s 1<br />

CCl4 1:7 10 8<br />

CHCl3 6:8 10 6<br />

PhCH2Cl 4:6 10 6<br />

CH3(CH2) 5C(CH3) 2Cl 4:0 10 5<br />

RCH2C(O)Cl 7 10 5a<br />

a At 80 8C.

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