"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
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40 Hydrogen Donor Abilities <strong>of</strong> Silicon Hydrides<br />
hn or D<br />
t-BuOOBu-t ƒƒƒ! 2 t-BuO: (3:13)<br />
t-BuO: þ R3SiH !t-BuOH þ R3Si: (3:14)<br />
Rate constants for Reaction (3.14) were measured directly by LFP techniques<br />
and are collected <strong>in</strong> Table 3.4 [23–27]. These values reflect the overall (or molecular)<br />
reactivity <strong>of</strong> the substrates regardless <strong>of</strong> the site or mechanism <strong>of</strong> the reaction.<br />
Mechanistic studies have shown that the attack <strong>of</strong> the t-BuO: radical on Et3SiH<br />
occurs <strong>in</strong> about 80 % <strong>of</strong> the cases at the SiH moiety and <strong>in</strong> 20 % at the ethyl groups<br />
at 27 8C [23], whereas the attack on (Me3Si) 3SiH occurs <strong>in</strong> about 95 % <strong>of</strong> the cases<br />
at the SiH moiety and <strong>in</strong> 5 % at the trimethylsilyl groups at 27 8C [26].<br />
The rate constants for reaction <strong>of</strong> t-BuO: radical with silanes <strong>in</strong>crease along<br />
the series Et3SiH < Ph3SiH < (MeS) 3SiH < (Me3Si) 3SiH with the expected<br />
<strong>in</strong>termediate values for silanes hav<strong>in</strong>g mixed substituents. <strong>In</strong> particular, the rate<br />
constants decrease along the two series PhSiH3 < Ph2SiH 2 < Ph3SiH and<br />
Me3SiH < Me3SiSi(H)Me2 < (Me3Si) 2Si(H)Me < (Me3Si) 3SiH.<br />
The Arrhenius parameters obta<strong>in</strong>ed for the reaction <strong>of</strong> t-BuO: radical with<br />
Et3SiH are log A=M 1 s 1 ¼ 8:5 and Ea ¼ 8:8 kJ/mol [23]. The Arrhenius parameters<br />
for Me3SiH <strong>in</strong> the gas phase are also available and were obta<strong>in</strong>ed by<br />
competition with the tert-butoxyl radical decomposition, i.e., log A=M 1 s 1 ¼<br />
8:7 and Ea ¼ 10:9 kJ/mol [28]. These preexponential factors lie <strong>in</strong> the expected<br />
range and, therefore, the activation energy is expected to be the major factor<br />
Table 3.4 Rate constants for reactions <strong>of</strong> tert-butoxyl [23–27] and cumylperoxyl [29]<br />
radicals with silicon hydrides<br />
Silane t-BuO:<br />
k=M 1 s 1 at 27 8C a<br />
n-C5H11SiH3 1:1 10 7<br />
PhSiH3 7:5 10 6 0.90<br />
Ph2SiH2 1:3 10 7<br />
Et3SiH 5:7 10 6 0.10 c<br />
PhMe2SiH 6:6 10 6 0.21<br />
Ph2MeSiH 0.43<br />
Ph3SiH 1:1 10 7 0.67<br />
(Me3Si)Me2SiH 1:7 10 7<br />
(Me3Si) 2MeSiH 6:2 10 7d<br />
(Me3Si) 3SiH 1:1 10 8 66.3<br />
H(PhSiH) nH 24.7 e<br />
(MeS) 3SiH 4:4 10 7<br />
(i-PrS) 3SiH 4:5 10 7<br />
PhMe2COO:<br />
k=M 1 s 1 at 73 8C b<br />
a<br />
Method: laser flash photolysis, if not otherwise mentioned. Solvent: 2:1 (v/v) di-tert-butyl peroxide/benzene or<br />
1:4 (v/v) di-tert-butyl peroxide/isooctane.<br />
b<br />
Method: <strong>in</strong>hibited hydrocarbon oxidation. Solvent: cumene.<br />
c<br />
Referr<strong>in</strong>g to t-BuMe2SiH.<br />
d<br />
Average value <strong>of</strong> competitive studies (Me3Si)Me2SiH=(Me3Si) 2MeSiH and (Me3Si) 2MeSiH=(Me3Si) 3SiH <strong>in</strong><br />
tert-butylbenzene [6].<br />
e<br />
Value for each SiH moiety.