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"Front Matter". In: Organosilanes in Radical Chemistry - Index of

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212 Silyl <strong>Radical</strong>s <strong>in</strong> Polymers and Materials<br />

The fabrication <strong>of</strong> Si(111) surfaces patterned with organic monolayers and<br />

oxide on the 10 mm scale has also been reported [65]. An H w Si(111) surface was<br />

irradiated at 254 nm through a gold m<strong>in</strong>igrid mask (Figure 8.7a) <strong>in</strong> air for<br />

30 m<strong>in</strong> to create a pattern <strong>of</strong> silicon oxide on an otherwise hydrogen-term<strong>in</strong>ated<br />

Si(111) surface. Immersion <strong>of</strong> this sample <strong>in</strong> deoxygenated 1-decene and irradiation<br />

(300 nm) for 3 h <strong>in</strong>duces hydrosilylation <strong>in</strong> the rema<strong>in</strong><strong>in</strong>g hydrogenterm<strong>in</strong>ated<br />

surface and results <strong>in</strong> an oxide/alkyl pattern. AFM and CCD optical<br />

images <strong>of</strong> these patterned surfaces are shown <strong>in</strong> Figure 8.7. Figure 8.7b reveals a<br />

well-ordered pattern after exposure to water vapour with the oxide (squares)<br />

be<strong>in</strong>g hydrophilic and 1-decene-modified surface (l<strong>in</strong>es) be<strong>in</strong>g hydrophobic.<br />

Figure 8.7c shows an organic surface that is topographically higher than the<br />

oxide, whereas <strong>in</strong> the frictional force mode image (Figure 8.7d) the contrast is<br />

improved by highlight<strong>in</strong>g the silicon oxide squares.<br />

Figure 8.7 140 mm 140 mm images <strong>of</strong> (a) AFM tapp<strong>in</strong>g mode image <strong>of</strong> the gold m<strong>in</strong>igrid<br />

mask, (b) CCD optical image <strong>of</strong> the patterned Si(111) surface after exposure to water vapor,<br />

(c) AFM height image <strong>of</strong> the patterned surface, and (d) AFM image taken <strong>in</strong> frictional force<br />

mode. Repr<strong>in</strong>ted with permission from Reference [65]. Copyright 2001 American Chemical<br />

Society.

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