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"Front Matter". In: Organosilanes in Radical Chemistry - Index of

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<strong>Radical</strong> <strong>Chemistry</strong> on Silicon Surfaces 211<br />

well-ordered monolayer with surpris<strong>in</strong>gly high coverage (97 %) [64]. For comparison,<br />

the analogous reaction with 1-octadecene afforded a 55 % coverage.<br />

The dependence <strong>of</strong> monolayer formation on the wavelength <strong>of</strong> the irradiation<br />

light (400–350 nm) and the reaction time has been studied <strong>in</strong> some details [64].<br />

<strong>In</strong>terest<strong>in</strong>gly, the optimum wavelength for both C<br />

w O and C C additions was<br />

w<br />

found to be about 385 nm, whereas later it was reported that the reaction<br />

efficiency <strong>in</strong>creases monotonically with decreas<strong>in</strong>g wavelength up to 254 nm<br />

(see Figure 8.4). However, the ability to photo<strong>in</strong>itiate the reaction <strong>of</strong> unsaturated<br />

compounds with H Si(111) opens the possibility <strong>of</strong> direct photopattern-<br />

w<br />

<strong>in</strong>g <strong>of</strong> organics on the surface. Figure 8.6 shows schematically the lightpromoted<br />

hydrosilylation with 1-alkene <strong>in</strong> the presence <strong>of</strong> a mask that can<br />

pattern the surface. The first photolithographic accomplishment to write<br />

>100 mm features, was obta<strong>in</strong>ed by expos<strong>in</strong>g to 385 nm light through a structured<br />

mask octadecanal with an H S(111) surface [64]. It was further demon-<br />

w<br />

strated that the unexposed areas rema<strong>in</strong>ed completely reactive.<br />

mask<br />

Si<br />

Si<br />

H<br />

Si<br />

H<br />

Si<br />

Si<br />

Si<br />

Si<br />

Si<br />

H<br />

Si<br />

H<br />

Si<br />

hν<br />

Si<br />

Si<br />

H<br />

Si<br />

H––Si(111)<br />

Figure 8.6 Schematic representation <strong>of</strong> light promoted hydrosilylation through mask<strong>in</strong>g procedure.<br />

Si<br />

Si<br />

Si<br />

Si<br />

Si<br />

R<br />

Si<br />

Si<br />

R<br />

H<br />

Si<br />

Si<br />

Si<br />

Si<br />

R<br />

Si<br />

Si

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