"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of "Front Matter". In: Organosilanes in Radical Chemistry - Index of
Radical Chemistry on Silicon Surfaces 209 H w Si(111) undergoes radical-activated reactions with a variety of terminal olefins to afford densely packed monolayers [48,57,58]. Reactions were carried out in neat deoxygenated alkenes using thermal decomposition of diacyl peroxides as the radical initiation. In the absence of radical initiation, it was found that the hydrosilylation process occurs either by heating at temperatures >150 8C or by UV irradiation, probably through a homolytic cleavage of the Si w H bond. ATR-FTIR and XPS spectroscopies as well as scanned-energy photoelectron diffraction (PED) provide evidence for a covalent bond between carbon and silicon. The modified surface could withstand exposure to boiling water, boiling CHCl3 and sonication in CH2Cl2, which also suggests chemisorption and not physisorption of the monolayer to the silicon. Approximately 50 % of the H w Si(111) groups reacted with 1-alkene and in agreement with the outcome of molecular modelling [48,59]. The alkyl chains are tilted ca 308 with respect to surface normal and are mainly in the all-trans conformation [60]. It is also worth mentioning that similar monolayers on H w Si(111) surface were obtained by Lewis acid-catalysed hydrosilylation of alkenes or by direct reaction with alkylmagnesium bromide [61]. The reaction is formally a hydrosilylation process analogous to the homogeneous reactions described in Chapter 5. Scheme 8.11 shows the proposed H w Si(111) surface-propagated radical chain mechanism [48]. The initially formed surface silyl radical reacts with alkene to form a secondary alkyl radical that abstracts hydrogen from a vicinal Si w H bond and creates another surface silyl radical. The best candidate for the radical translocation from the carbon atom of the alkyl chain to a silicon surface is the 1,5 hydrogen shift shown in Scheme 8.11. Hydrogen abstraction from the neat alkene, in particular from the Si Si H Si Si Si Si R Si Si H Si Si Si H––Si(111) H Si Si Si H Si H Si Si Si Si Si radical initiation radical translocation Si Si Si Si Si Si R Si Si Scheme 8.11 Hydrosilylation of an alkene by hydrogen terminated Si(111) H Si H Si Si Si Si Si H Si H Si R Si Si Si Si
210 Silyl Radicals in Polymers and Materials allylic position, may be competitive. However, lack of significant polymerization when styrene is used as 1-alkene, indicates the efficiency of the 1,5 hydrogen shift with respect to carbon–carbon bond formation [48]. Electrons from a scanning tunnelling microscope in ultrahigh vacuum have been used to create surface isolated silyl radical on Si(111) and their exposure to styrene leads to the formation of compact islands containing multiple styrene adsorbates bonded to the surface through individual C w Si bonds [62]. These observations support the radical chain reaction mechanism of Scheme 8.11 and indicate that the chain reaction does not propagate in a single direction on H w Si(111). The fact that UV irradiation of O2-saturated terminal olefins and H w Si(111) leads to the formation of oxidized silicon and a partial hydrocarbon monolayer [48] indicates competitive reactions of oxygen and olefin with surface silyl radical. Terminal acetylenes, such as 1-octyne or phenylacetylene, also form monolayers on H w Si(111) when initiated by diacyl peroxide decomposition or UV irradiation [48,58]. Evidence that a vinyl group is attached to the Si surface is obtained from the ATR-FTIR and XPS spectra. Also in this case, the proposed mechanism is a surface propagation chain reaction in which a vinyl radical, formed by the addition of alkyne to a surface silyl radical, abstracts a hydrogen atom from the adjacent site of silicon backbone. The efficiency of this hydrogen transfer is expected to depend also on the shape of the intermediate carboncentred radical. Figure 8.5 shows the shapes of radical-adducts derived from 1-octyne (60) and phenylacetylene (61) being a s-type and p-type radical, respectively (see also Section 5.2.1). The decrease in packing density observed on going from 1-octyne to phenylacetylene [48] could also be due to different radical chain efficiencies and, in particular, of the hydrogen transfer step. The functionalization of H w Si(111) surfaces has been extended to the reaction with aldehydes. Indeed, H w Si(111) reacts thermally (16 h at 85 8C) with decanal to form the corresponding Si w OCH2R monolayer that has been characterized by ATR-FTIR, XPS and atomic force microscopy (AFM) [63]. The reaction is thought to proceed either by a radical chain mechanism via adventitious radical initiation or by nucleophilic addition/hydride transfer. On the other hand, the reaction of H w Si(111) with octadecanal activated by irradiation with a 150 W mercury vapour lamp (21 h at 20–50 8C) afforded a Si Si R Si Si H Si Si Si Si Si Si Si 60 61 Figure 8.5 s-type (60) and p-type (61) vinyl radicals. Ph H Si Si Si
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210 Silyl <strong>Radical</strong>s <strong>in</strong> Polymers and Materials<br />
allylic position, may be competitive. However, lack <strong>of</strong> significant polymerization<br />
when styrene is used as 1-alkene, <strong>in</strong>dicates the efficiency <strong>of</strong> the 1,5 hydrogen<br />
shift with respect to carbon–carbon bond formation [48]. Electrons from a<br />
scann<strong>in</strong>g tunnell<strong>in</strong>g microscope <strong>in</strong> ultrahigh vacuum have been used to create<br />
surface isolated silyl radical on Si(111) and their exposure to styrene leads to the<br />
formation <strong>of</strong> compact islands conta<strong>in</strong><strong>in</strong>g multiple styrene adsorbates bonded to<br />
the surface through <strong>in</strong>dividual C w Si bonds [62]. These observations support<br />
the radical cha<strong>in</strong> reaction mechanism <strong>of</strong> Scheme 8.11 and <strong>in</strong>dicate that the<br />
cha<strong>in</strong> reaction does not propagate <strong>in</strong> a s<strong>in</strong>gle direction on H w Si(111). The fact<br />
that UV irradiation <strong>of</strong> O2-saturated term<strong>in</strong>al olef<strong>in</strong>s and H w Si(111) leads to<br />
the formation <strong>of</strong> oxidized silicon and a partial hydrocarbon monolayer [48]<br />
<strong>in</strong>dicates competitive reactions <strong>of</strong> oxygen and olef<strong>in</strong> with surface silyl radical.<br />
Term<strong>in</strong>al acetylenes, such as 1-octyne or phenylacetylene, also form monolayers<br />
on H w Si(111) when <strong>in</strong>itiated by diacyl peroxide decomposition or UV<br />
irradiation [48,58]. Evidence that a v<strong>in</strong>yl group is attached to the Si surface is<br />
obta<strong>in</strong>ed from the ATR-FTIR and XPS spectra. Also <strong>in</strong> this case, the proposed<br />
mechanism is a surface propagation cha<strong>in</strong> reaction <strong>in</strong> which a v<strong>in</strong>yl radical,<br />
formed by the addition <strong>of</strong> alkyne to a surface silyl radical, abstracts a hydrogen<br />
atom from the adjacent site <strong>of</strong> silicon backbone. The efficiency <strong>of</strong> this hydrogen<br />
transfer is expected to depend also on the shape <strong>of</strong> the <strong>in</strong>termediate carboncentred<br />
radical. Figure 8.5 shows the shapes <strong>of</strong> radical-adducts derived from<br />
1-octyne (60) and phenylacetylene (61) be<strong>in</strong>g a s-type and p-type radical,<br />
respectively (see also Section 5.2.1). The decrease <strong>in</strong> pack<strong>in</strong>g density observed<br />
on go<strong>in</strong>g from 1-octyne to phenylacetylene [48] could also be due to different<br />
radical cha<strong>in</strong> efficiencies and, <strong>in</strong> particular, <strong>of</strong> the hydrogen transfer step.<br />
The functionalization <strong>of</strong> H w Si(111) surfaces has been extended to the reaction<br />
with aldehydes. <strong>In</strong>deed, H w Si(111) reacts thermally (16 h at 85 8C) with<br />
decanal to form the correspond<strong>in</strong>g Si w OCH2R monolayer that has been<br />
characterized by ATR-FTIR, XPS and atomic force microscopy (AFM) [63].<br />
The reaction is thought to proceed either by a radical cha<strong>in</strong> mechanism via<br />
adventitious radical <strong>in</strong>itiation or by nucleophilic addition/hydride transfer. On<br />
the other hand, the reaction <strong>of</strong> H w Si(111) with octadecanal activated by<br />
irradiation with a 150 W mercury vapour lamp (21 h at 20–50 8C) afforded a<br />
Si<br />
Si<br />
R<br />
Si<br />
Si<br />
H<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
60 61<br />
Figure 8.5 s-type (60) and p-type (61) v<strong>in</strong>yl radicals.<br />
Ph<br />
H<br />
Si<br />
Si<br />
Si