"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
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<strong>Radical</strong> <strong>Chemistry</strong> on Silicon Surfaces 209<br />
H w Si(111) undergoes radical-activated reactions with a variety <strong>of</strong> term<strong>in</strong>al<br />
olef<strong>in</strong>s to afford densely packed monolayers [48,57,58]. Reactions were carried<br />
out <strong>in</strong> neat deoxygenated alkenes us<strong>in</strong>g thermal decomposition <strong>of</strong> diacyl peroxides<br />
as the radical <strong>in</strong>itiation. <strong>In</strong> the absence <strong>of</strong> radical <strong>in</strong>itiation, it was found<br />
that the hydrosilylation process occurs either by heat<strong>in</strong>g at temperatures<br />
>150 8C or by UV irradiation, probably through a homolytic cleavage <strong>of</strong> the<br />
Si w H bond. ATR-FTIR and XPS spectroscopies as well as scanned-energy<br />
photoelectron diffraction (PED) provide evidence for a covalent bond between<br />
carbon and silicon. The modified surface could withstand exposure to boil<strong>in</strong>g<br />
water, boil<strong>in</strong>g CHCl3 and sonication <strong>in</strong> CH2Cl2, which also suggests chemisorption<br />
and not physisorption <strong>of</strong> the monolayer to the silicon. Approximately<br />
50 % <strong>of</strong> the H w Si(111) groups reacted with 1-alkene and <strong>in</strong> agreement with the<br />
outcome <strong>of</strong> molecular modell<strong>in</strong>g [48,59]. The alkyl cha<strong>in</strong>s are tilted ca 308 with<br />
respect to surface normal and are ma<strong>in</strong>ly <strong>in</strong> the all-trans conformation [60]. It is<br />
also worth mention<strong>in</strong>g that similar monolayers on H w Si(111) surface were<br />
obta<strong>in</strong>ed by Lewis acid-catalysed hydrosilylation <strong>of</strong> alkenes or by direct reaction<br />
with alkylmagnesium bromide [61].<br />
The reaction is formally a hydrosilylation process analogous to the homogeneous<br />
reactions described <strong>in</strong> Chapter 5. Scheme 8.11 shows the proposed<br />
H w Si(111) surface-propagated radical cha<strong>in</strong> mechanism [48]. The <strong>in</strong>itially<br />
formed surface silyl radical reacts with alkene to form a secondary alkyl radical<br />
that abstracts hydrogen from a vic<strong>in</strong>al Si w H bond and creates another surface<br />
silyl radical. The best candidate for the radical translocation from the carbon<br />
atom <strong>of</strong> the alkyl cha<strong>in</strong> to a silicon surface is the 1,5 hydrogen shift shown <strong>in</strong><br />
Scheme 8.11. Hydrogen abstraction from the neat alkene, <strong>in</strong> particular from the<br />
Si<br />
Si<br />
H<br />
Si<br />
Si<br />
Si<br />
Si<br />
R<br />
Si<br />
Si<br />
H<br />
Si<br />
Si<br />
Si<br />
H––Si(111)<br />
H<br />
Si<br />
Si<br />
Si<br />
H<br />
Si<br />
H<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
radical<br />
<strong>in</strong>itiation<br />
radical<br />
translocation<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
R<br />
Si<br />
Si<br />
Scheme 8.11 Hydrosilylation <strong>of</strong> an alkene by hydrogen term<strong>in</strong>ated Si(111)<br />
H<br />
Si<br />
H<br />
Si<br />
Si<br />
Si<br />
Si<br />
Si<br />
H<br />
Si<br />
H<br />
Si<br />
R<br />
Si<br />
Si<br />
Si<br />
Si