"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of
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<strong>Radical</strong> <strong>Chemistry</strong> on Silicon Surfaces 205<br />
actions determ<strong>in</strong>e the reactivity and selectivity <strong>of</strong> the reaction [46]. On the other<br />
hand, <strong>in</strong> radical chemistry consequences should be attenuated.<br />
8.5.1 OXIDATION OF HYDROGEN-TERMINATED SILICON<br />
SURFACES<br />
The reaction <strong>of</strong> hydrogen-term<strong>in</strong>ated Si(111), H w Si(111), with molecular<br />
oxygen under photochemical conditions has been <strong>in</strong>vestigated <strong>in</strong> some detail<br />
[48]. Figure 8.4 highlights the photo<strong>in</strong>duced reactivity <strong>of</strong> H w Si(111) <strong>in</strong> air<br />
followed by FTIR. Spectrum (a) shows that the exposure <strong>of</strong> material to air <strong>in</strong><br />
the dark does not affect its stability, whereas after 30 m<strong>in</strong> <strong>of</strong> photolysis with a<br />
mercury lamp, the area <strong>of</strong> the orig<strong>in</strong>al peak decreases to 14 % (spectrum d). Xray<br />
photoelectron spectroscopy (XPS) <strong>of</strong> the irradiated surface shows a strong<br />
O(1s) signal and a shifted Si(2p) signal <strong>in</strong>dicat<strong>in</strong>g the formation <strong>of</strong> SiO2.<br />
Ellipsometry studies reveal the presence <strong>of</strong> an 8 A ˚ film. When the surface is<br />
exposed to 350 nm light for the same total energy, the loss <strong>of</strong> Si w H bonds is<br />
decreased appreciably (spectrum c). With 450 nm light no detectable loss <strong>of</strong><br />
Si w H is observed (spectrum b).<br />
It is worth mention<strong>in</strong>g that the photooxidation <strong>of</strong> porous silicon behaves<br />
differently [49]. <strong>In</strong>deed, FTIR spectra show that there is a tremendous <strong>in</strong>crease<br />
<strong>in</strong> nSi O, without a correspond<strong>in</strong>gly large loss <strong>of</strong> nSi H peak <strong>in</strong>tensity. The<br />
decrease <strong>of</strong> the nSi H band is <strong>of</strong>fset by an <strong>in</strong>crease <strong>in</strong> the nOSi H band, result<strong>in</strong>g<br />
<strong>in</strong> no net loss <strong>of</strong> hydride species on the surface dur<strong>in</strong>g the course <strong>of</strong> the photooxidation<br />
reaction. These data apparently suggest that oxidation does not result<br />
<strong>in</strong> the removal <strong>of</strong> H atoms, imply<strong>in</strong>g that Si w Si bonds are attacked directly.<br />
Arb. Units<br />
dark<br />
99�1%<br />
0<br />
98�2%<br />
0<br />
91�2%<br />
0<br />
(a)<br />
450 nm<br />
(b) (c) (d)<br />
350 nm<br />
250 nm<br />
14%, 8<br />
2150<br />
2100 (cm−1 )<br />
2050<br />
Figure 8.4 ATR-FTIR spectra <strong>of</strong> H w Si(111) after exposure to air (a) <strong>in</strong> the dark, (b) with<br />
450 nm (broadband) illum<strong>in</strong>ation, (c) with 350 nm (broadband) illum<strong>in</strong>ation, and (d) with Hg<br />
lamp illum<strong>in</strong>ation. Repr<strong>in</strong>ted with permission from Reference [48]. Copyright 2000 American<br />
Chemical Society.