"Front Matter". In: Organosilanes in Radical Chemistry - Index of
"Front Matter". In: Organosilanes in Radical Chemistry - Index of "Front Matter". In: Organosilanes in Radical Chemistry - Index of
Silylated Fullerenes 201 electron transfer mechanism (Reactions 8.17 and 8.18) [36]. The electron transfer has been revealed by following the decay of 3 C 60 or, alternatively, the rise of the radical anion of C60 and the radical cation of polysilane, which both absorb in the near-IR region. The kET for the latter reaction is 2:0 10 8 M 1 s 1 in benzene–acetonitrile (2:1) and depends on the polarity of the medium. 3 C*60 C 60 hν (532 nm) 3C* 60 (8.17) + Ph Si kET 3C60 + Ph Si (8.18) Me n Me n The photochemical addition of some cyclic oligosilanes to C60 has also been found interesting. Scheme 8.8 shows some examples of such a transformation. Irradiation (l > 300 nm) of a toluene solution of disilirane 36 with C60 afforded the fullerene derivative 37 in a 82 % yield [37]. The reaction mechanism is still unknown. When toluene is replaced by benzonitrile the bis-silylated product of the solvent was obtained in good yields. In these experiments a photoinduced electron transfer between 36 and C60 is demonstrated, indicating the role of C60 as sensitizer [38]. The photoinduced reactions of disilirane 36 with higher fullerenes such as C70, C 76(D2), C78(C2v)and C84(D2) have also been reported [39,40]. R 2 Si SiR 2 37, 82% R Si Si R R 36 R C 60 R Si Si R R 38 Ph Ph Ph Si Si Ph Si Si Ph Ph 40 Ph Ph R R 2Si 39, 61% R 2 Si Ph Ph Si Ph Si Ph Si Si Ph H PhPh Scheme 8.8 Photochemical (l > 300 nm) addition of cyclic oligosilanes to C60 41, 87%
202 Silyl Radicals in Polymers and Materials Irradiation (l > 300 nm) of a toluene solution of disilacyclobutane 38 with C60 afforded the fullerene derivative 39 in a 61 % yield, resulting from an unexpected rearrangement of the disilacyclobutane unit [41]. Also this reaction mechanism is still unknown. On the other hand, cyclotetrasilane 40 reacted with C60 under identical experimental conditions, affording the 1:1 adduct 41 in an 87 % yield [42]. It is worth underlining that the rearrangement of the cyclotetrasilane unit derived from the addition of a silyl radical moiety to one of the terminal phenyl rings. Photoreaction of C60 with higher homologous cyclic oligosilanes such as (Ph2Si) 5, (Et2Si) 5 and (Me2Si) 6 has also been investigated using 254 nm excitation [35]. In these cases, 1,4-addition products having the formula C60(SiR 2) 4 have been obtained. Laser flash photolysis experiments showed that the 3 C 60 (Reaction 8.17) reacts with cyclic oligosilanes 42, 43 and 44 in benzonitrile by an electron transfer mechanism [43]. The rate constant (kET) for the three-membered cyclic compound 42 is found to be 7:0 10 8 M 1 s 1 , whereas for the other two compounds it was more than two orders of magnitute lower, i.e., (1–2) 10 6 M 1 s 1 . R2 Si R2Si SiR2 R2Si SiR2 R2Si SiR2 R2Si R2 Si SiR2 R2Si SiR2 42, R = mesityl 43, R = i-Pr 44, R = Ph The chemical reactivity of silylated fullerenes has hardly been explored. The fluorescence quantum yield of 1,16-adduct 29 (R ¼ Ph, R 0 ¼ t-Bu) was found slightly larger than that of C60, whereas its triplet excited state and quenching rates were very similar to those of C60 [44]. From the silyl radical chemistry point of view, it is worth underlining that the reaction of silylated fullerene 41 with bromine in carbon disulfide under daylight irradiation, afforded C60 in a 90 % yield, together with the unexpected 9,10-disilaanthracene derivative 47, whose structure was determined by X-ray crystallography, in a 43 % yield (Scheme 8.9) [45]. Although the reaction mechanism is unknown, the formation of intermediate silyl radical 45 was suggested, which rearranges by intramolecular addition to a pendant phenyl moiety to ultimately provide 46 (cf. Section 6.2). Further oxidation of the central Si w Si bond is expected to give the observed product. 8.5 RADICAL CHEMISTRY ON SILICON SURFACES Silicon is the most technologically important material utilized today owing to its unique role in the fabrication of semiconductor devices and microprocessor chips. The understanding and control of silicon surfaces is of great importance in the production of silicon-based electronic devices, since the fraction of atoms
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202 Silyl <strong>Radical</strong>s <strong>in</strong> Polymers and Materials<br />
Irradiation (l > 300 nm) <strong>of</strong> a toluene solution <strong>of</strong> disilacyclobutane 38 with<br />
C60 afforded the fullerene derivative 39 <strong>in</strong> a 61 % yield, result<strong>in</strong>g from an<br />
unexpected rearrangement <strong>of</strong> the disilacyclobutane unit [41]. Also this reaction<br />
mechanism is still unknown.<br />
On the other hand, cyclotetrasilane 40 reacted with C60 under identical<br />
experimental conditions, afford<strong>in</strong>g the 1:1 adduct 41 <strong>in</strong> an 87 % yield [42]. It<br />
is worth underl<strong>in</strong><strong>in</strong>g that the rearrangement <strong>of</strong> the cyclotetrasilane unit derived<br />
from the addition <strong>of</strong> a silyl radical moiety to one <strong>of</strong> the term<strong>in</strong>al phenyl r<strong>in</strong>gs.<br />
Photoreaction <strong>of</strong> C60 with higher homologous cyclic oligosilanes such as<br />
(Ph2Si) 5, (Et2Si) 5 and (Me2Si) 6 has also been <strong>in</strong>vestigated us<strong>in</strong>g 254 nm excitation<br />
[35]. <strong>In</strong> these cases, 1,4-addition products hav<strong>in</strong>g the formula C60(SiR 2) 4<br />
have been obta<strong>in</strong>ed.<br />
Laser flash photolysis experiments showed that the 3 C 60 (Reaction 8.17)<br />
reacts with cyclic oligosilanes 42, 43 and 44 <strong>in</strong> benzonitrile by an electron<br />
transfer mechanism [43]. The rate constant (kET) for the three-membered cyclic<br />
compound 42 is found to be 7:0 10 8 M 1 s 1 , whereas for the other two<br />
compounds it was more than two orders <strong>of</strong> magnitute lower, i.e.,<br />
(1–2) 10 6 M 1 s 1 .<br />
R2 Si<br />
R2Si SiR2 R2Si SiR2 R2Si SiR2 R2Si R2 Si<br />
SiR2 R2Si SiR2 42, R = mesityl 43, R = i-Pr 44, R = Ph<br />
The chemical reactivity <strong>of</strong> silylated fullerenes has hardly been explored. The<br />
fluorescence quantum yield <strong>of</strong> 1,16-adduct 29 (R ¼ Ph, R 0 ¼ t-Bu) was found<br />
slightly larger than that <strong>of</strong> C60, whereas its triplet excited state and quench<strong>in</strong>g<br />
rates were very similar to those <strong>of</strong> C60 [44]. From the silyl radical chemistry po<strong>in</strong>t<br />
<strong>of</strong> view, it is worth underl<strong>in</strong><strong>in</strong>g that the reaction <strong>of</strong> silylated fullerene 41 with<br />
brom<strong>in</strong>e <strong>in</strong> carbon disulfide under daylight irradiation, afforded C60 <strong>in</strong> a 90 %<br />
yield, together with the unexpected 9,10-disilaanthracene derivative 47, whose<br />
structure was determ<strong>in</strong>ed by X-ray crystallography, <strong>in</strong> a 43 % yield (Scheme 8.9)<br />
[45]. Although the reaction mechanism is unknown, the formation <strong>of</strong> <strong>in</strong>termediate<br />
silyl radical 45 was suggested, which rearranges by <strong>in</strong>tramolecular addition to<br />
a pendant phenyl moiety to ultimately provide 46 (cf. Section 6.2). Further<br />
oxidation <strong>of</strong> the central Si w Si bond is expected to give the observed product.<br />
8.5 RADICAL CHEMISTRY ON SILICON SURFACES<br />
Silicon is the most technologically important material utilized today ow<strong>in</strong>g to<br />
its unique role <strong>in</strong> the fabrication <strong>of</strong> semiconductor devices and microprocessor<br />
chips. The understand<strong>in</strong>g and control <strong>of</strong> silicon surfaces is <strong>of</strong> great importance<br />
<strong>in</strong> the production <strong>of</strong> silicon-based electronic devices, s<strong>in</strong>ce the fraction <strong>of</strong> atoms