Applications for Maskless E-Beam Lithography between ... - Sematech
Applications for Maskless E-Beam Lithography between ... - Sematech
Applications for Maskless E-Beam Lithography between ... - Sematech
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PML2<br />
SEMATECH Litho Forum<br />
Vancouver, 22-May-2005<br />
Throughput estimation<br />
Feature POC tool Beta tool<br />
Technology node 45 nm 45 nm<br />
Resist 36 µC/cm² 18 µC/cm²<br />
APS size 20x20 mm² 40x40 mm²<br />
aperture size/ number 5µm/ 0.3Mio 5µm/ 1.2Mio<br />
Blanking rate<br />
Current in column<br />
1 MHz 8 MHz<br />
50% beams on 0.45 µA 3.5 µA<br />
Total blur < 10 nm 13 nm<br />
v-stage<br />
Throughput<br />
0.025 m/s 0.2 m/s<br />
(12” wafer)<br />
0.1 WPH 1.3 WPH<br />
Results are based on:<br />
- 0.1s stage turn-around time, 120s overhead/ wafer<br />
- calculation of 3rd / 5th order electron optical aberrations<br />
- Monte Carlo simulation of all space charge effects (ray tracing)<br />
IMS<br />
Nanofabrication<br />
Potential: 5 WPH<br />
Potential: 5 WPH<br />
sophisticated stage<br />
required (0.5…1m/s)<br />
25
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