Applications for Maskless E-Beam Lithography between ... - Sematech

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PML2 SEMATECH Litho Forum Vancouver, 22-May-2005 Multi e-beam, single column 5keV 100keV Single Electron source Condenser Optics Programmable Aperture Plate System (APS) 200x Reduction Projection Electrostatic / Magnetic Optics Scanning Wafer Stage IMS Nanofabrication 24
PML2 SEMATECH Litho Forum Vancouver, 22-May-2005 Throughput estimation Feature POC tool Beta tool Technology node 45 nm 45 nm Resist 36 µC/cm² 18 µC/cm² APS size 20x20 mm² 40x40 mm² aperture size/ number 5µm/ 0.3Mio 5µm/ 1.2Mio Blanking rate Current in column 1 MHz 8 MHz 50% beams on 0.45 µA 3.5 µA Total blur < 10 nm 13 nm v-stage Throughput 0.025 m/s 0.2 m/s (12” wafer) 0.1 WPH 1.3 WPH Results are based on: - 0.1s stage turn-around time, 120s overhead/ wafer - calculation of 3rd / 5th order electron optical aberrations - Monte Carlo simulation of all space charge effects (ray tracing) IMS Nanofabrication Potential: 5 WPH Potential: 5 WPH sophisticated stage required (0.5…1m/s) 25
Page 1 and 2: Applications for Mask-less E-Beam L
Page 3 and 4: Table of Contents E-Beam Lithograph
Page 5 and 6: Center of Competence E-Beam at QD P
Page 7 and 8: 2005 Timeline E-Beam Project 4 5 6
Page 11 and 12: Mission or Fraunhofer CNT Center Na
Page 13 and 14: European Nanotechnology Platform -
Page 15 and 16: CNT Layout acces to CNT offices pag
Page 17 and 18: Resist Benchmarking at IMS Chips Ex
Page 19 and 20: Status Exposure Results: Negative R
Page 23: PML2 SEMATECH Litho Forum Vancouver
Page 27 and 28: Acknowledgement The Qimonda part of
Page 29: Thank you The World’s Leading Cre

Applications for Maskless E-Beam Lithography between ... - Sematech

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