Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
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IBM Systems and Technology Group<br />
Experimental C<strong>on</strong>diti<strong>on</strong>s<br />
� Exposure<br />
– ASML AT:1150i / TEL Lithius track<br />
– Attenuated PSM mask<br />
– NA = 0.75<br />
– Annular Illum<strong>in</strong>ati<strong>on</strong>, σ i /σ o = 0.75/0.5<br />
� Materials<br />
– Resists: (A) High activati<strong>on</strong> (B) Low activati<strong>on</strong><br />
– Topcoat: Aqueous base soluble topcoat TC1<br />
– BARC AR40<br />
7 <str<strong>on</strong>g>Effect</str<strong>on</strong>g> <str<strong>on</strong>g>of</str<strong>on</strong>g> <str<strong>on</strong>g>Wett<strong>in</strong>g</str<strong>on</strong>g> <str<strong>on</strong>g>Time</str<strong>on</strong>g> <strong>on</strong> <strong>CD</strong>U - Kaushal Patel September 13, 2005<br />
© 2003 IBM Corporati<strong>on</strong>
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