Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
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IBM Systems and Technology Group<br />
Photoresist Comp<strong>on</strong>ent Extracti<strong>on</strong> by Water<br />
� Extracti<strong>on</strong> rate depends <strong>on</strong>:<br />
– Type <str<strong>on</strong>g>of</str<strong>on</strong>g> comp<strong>on</strong>ent<br />
– Initial distributi<strong>on</strong> <strong>in</strong> resist<br />
– Water c<strong>on</strong>tact time<br />
– Presence <str<strong>on</strong>g>of</str<strong>on</strong>g> a topcoat<br />
– Water penetrati<strong>on</strong> <strong>in</strong>to resist<br />
3 <str<strong>on</strong>g>Effect</str<strong>on</strong>g> <str<strong>on</strong>g>of</str<strong>on</strong>g> <str<strong>on</strong>g>Wett<strong>in</strong>g</str<strong>on</strong>g> <str<strong>on</strong>g>Time</str<strong>on</strong>g> <strong>on</strong> <strong>CD</strong>U - Kaushal Patel September 13, 2005<br />
Extracted Photoacid (nmol/ml)<br />
0.9<br />
0.8<br />
0.7<br />
0.6<br />
0.5<br />
0.4<br />
0.3<br />
0.2<br />
0.1<br />
0<br />
Data from Greg Wallraff, Carl Lars<strong>on</strong><br />
PAG1<br />
PAG2<br />
PAG3<br />
6 60 300<br />
Water Extracti<strong>on</strong> <str<strong>on</strong>g>Time</str<strong>on</strong>g> (sec)<br />
� Extracti<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> photoacid and quencher alters the distributi<strong>on</strong> <strong>in</strong> the<br />
resist which could affect pr<str<strong>on</strong>g>of</str<strong>on</strong>g>iles<br />
© 2003 IBM Corporati<strong>on</strong>
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