Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
Effect of Wetting Time on CD Uniformity in Immersion Lithography
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Extracted Photoacid (ppb)<br />
18<br />
16<br />
14<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
IBM Systems and Technology Group<br />
Photoresist Comp<strong>on</strong>ent Extracti<strong>on</strong> by Water<br />
� Extracti<strong>on</strong> <str<strong>on</strong>g>of</str<strong>on</strong>g> resist<br />
comp<strong>on</strong>ents <strong>in</strong>to water<br />
occurs at a very short timescale<br />
(1-5 sec<strong>on</strong>ds)<br />
y = y s (1-e -t/τ )<br />
Measured<br />
Fit<br />
0 20 40 60 80<br />
Water R<strong>in</strong>se <str<strong>on</strong>g>Time</str<strong>on</strong>g> (sec)<br />
� Photoacid extracti<strong>on</strong><br />
<strong>in</strong>creases with exposure<br />
2 <str<strong>on</strong>g>Effect</str<strong>on</strong>g> <str<strong>on</strong>g>of</str<strong>on</strong>g> <str<strong>on</strong>g>Wett<strong>in</strong>g</str<strong>on</strong>g> <str<strong>on</strong>g>Time</str<strong>on</strong>g> <strong>on</strong> <strong>CD</strong>U - Kaushal Patel September 13, 2005<br />
Extracted Photoacid (ppb)<br />
20<br />
18<br />
16<br />
14<br />
12<br />
10<br />
8<br />
6<br />
4<br />
2<br />
0<br />
Data from Greg Wallraff, Carl Lars<strong>on</strong><br />
Unexposed<br />
Exposed<br />
Resist 1 Resist 2<br />
© 2003 IBM Corporati<strong>on</strong>
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