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Problems 663<br />

8–10 A digital TV station transmits on Channel 7 with an ERP of 18 kW. The signal from this TV<br />

station is received 50 miles away via a LOS path with a receiving antenna that has a gain of 8 dB<br />

on Channel 7. Calculate the power at the receiving antenna output-connector in:<br />

(a) dBm units.<br />

(b) in dBmV units across a 75 Ω load.<br />

(c) in mV across a 75 Ω load.<br />

8–11 Rework Prob. 8–10 if the TV station operates on Channel 42.<br />

8–12 A digital TV station operates on Channel 7 and another digital TV station operates on Channel 51.<br />

Using MATLAB, plot the free-space loss (in dB) for the Channel 7 station as a function of distance<br />

in miles. Repeat the plot for the Channel 51 station. Compare these two results by plotting them on<br />

the same figure. Do these losses change if these are analog TV stations instead of digital?<br />

8–13 Using MATLAB, plot the free-space loss in dB as a function of distance in miles for a cellular<br />

link at 850 MHz. Also, plot the LOS loss for a cellular link at 1900 MHz. Compare these two<br />

results by plotting them on the same figure. Comparing these two plots, which link costs the<br />

cellular company less to operate for the same cell-site coverage area?<br />

★ 8–14 Using MATLAB, plot the PSD for a thermal noise source with a resistance of 10 kΩ over a frequency<br />

range of 10 through 100,000 GHz where T = 300 K.<br />

8–15 Given the RC circuit shown in Fig. P8–15, where R is a physical resistor at temperature T, find the<br />

RMS value of the noise voltage that appears at the output in terms of k, T, R, and C.<br />

R<br />

C<br />

V rms =?<br />

Figure P8–15<br />

8–16 A receiver is connected to an antenna system that has a noise temperature of 100 K. Find the<br />

noise power that is available from the source over a 20-MHz band.<br />

★ 8–17 A bipolar transistor amplifier is modeled as shown in Fig. P8–17. Find a formula for the available<br />

power gain in terms of the appropriate parameters.<br />

i<br />

Transistor model<br />

<br />

R s<br />

E s<br />

h ie h fe i<br />

1<br />

R=––<br />

h oe<br />

R L<br />

<br />

Figure P8–17

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