continued from part 1 - Controller General of Patents, Designs, and ...

(12) PATENT APPLICATION PUBLICATION (21) Application No.6328/DELNP/2008 A
(19) INDIA
(22) Date of filing of Application :18/07/2008 (43) Publication Date : 24/10/2008
(54) Title of the invention : METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
(51) International classification :H01L 21/762 (71)Name of Applicant :
(31) Priority Document No :05112835.3 1)NXP B.V.
(32) Priority Date :22/12/2005
Address of Applicant :HIGH TECH CAMPUS 60, NL-5656
(33) Name of priority country :EPO
AG EINDHOVEN (NL) Netherlands
(86) International Application No :PCT/IB2006/054928 (72)Name of Inventor :
Filing Date
:18/12/2006
1)SONSKY, JAN
(87) International Publication No :WO 2007/072406 2)VAN NOORT, WIBO, D.
(61) Patent of Addition to Application
Number
Filing Date
:NA
:NA
(62) Divisional to Application Number :NA
Filing Date
:NA
(57) Abstract :
A method of manufacturing a semiconductor device wherein a laminate structure comprising a sacrificial layer is sandwiched between
two etch stop layers (8,11) and which separates a semiconductor membrane (9) from a bulk substrate (1) is used to provide an
underetched structure. Access trenches (4) and support trenches (5) are formed in the layered structure through the thickness of the
semiconductor layer (9) and through the upper etch stop layer (8). The support trenches extend deeper through the sacrificial layer
(12) and the lower etch stop layer and are filled. The sacrificial layer is exposed and etched away selectively to the etch stop layers to
form a.cavity (30) and realise a semiconductor membrane which is attached to the bulk substrate via a vertical support structure
comprising the filled support trenches.
No. of Pages : 32 No. of Claims : 14
The Patent Office Journal 24/10/2008 25803