continued from part 1 - Controller General of Patents, Designs, and ...

(12) PATENT APPLICATION PUBLICATION (21) Application No.6651/DELNP/2008 A
(19) INDIA
(22) Date of filing of Application :31/07/2008 (43) Publication Date : 24/10/2008
(54) Title of the invention : SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME
(51) International classification :H01L 29/78 (71)Name of Applicant :
(31) Priority Document No :11/390,796
1)FREESCALE SEMICONDUCTOR, INC.
(32) Priority Date :27/03/2006
Address of Applicant :6501 WILLIAM CANNON DRIVE
(33) Name of priority country :U.S.A.
WEST, AUSTIN, TEXAS 78735, U.S.A. U.S.A.
(86) International Application No :PCT/US2007/062923 (72)Name of Inventor :
Filing Date
:28/02/2007
1)KHEMKA,VISHNU K
(87) International Publication No :WO 2007/112171 2)BOSE, AMITAVA
(61) Patent of Addition to Application
Number
Filing Date
:NA
:NA
3)ROGGENDAUER, TODD, C
4)ZHU, RONGHUA
(62) Divisional to Application Number :NA
Filing Date
:NA
(57) Abstract :
A semiconductor device may include a semiconductor substrate having a first dopant type. A first semiconductor region within the
semiconductor substrate may have a plurality of first and second portions (44, 54). The first portions (44) may have a first thickness,
and the second portions (54) may have a second thickness. The first semiconductor region may have a second dopant type. A plurality
of second semiconductor regions (42) within the semiconductor substrate may each be positioned at least one of directly below and
directly above a respective one of the first portions (44) of the first semiconductor region and laterally between a respective pair of the
second portions (54) of the first semiconductor region. A third semiconductor region (56) within the semiconductor substrate may
have the first dopant type. A gate electrode (64) may be over at least a portion of the first semiconductor region and at least a portion
of the third semiconductor region (56).
No. of Pages : 27 No. of Claims : 20
The Patent Office Journal 24/10/2008 26114