11.12.2012 Views

continued from part 1 - Controller General of Patents, Designs, and ...

continued from part 1 - Controller General of Patents, Designs, and ...

continued from part 1 - Controller General of Patents, Designs, and ...

SHOW MORE
SHOW LESS

You also want an ePaper? Increase the reach of your titles

YUMPU automatically turns print PDFs into web optimized ePapers that Google loves.

(12) PATENT APPLICATION PUBLICATION (21) Application No.6488/DELNP/2008 A<br />

(19) INDIA<br />

(22) Date <strong>of</strong> filing <strong>of</strong> Application :24/07/2008 (43) Publication Date : 24/10/2008<br />

(54) Title <strong>of</strong> the invention : "METHOD FOR CONTINUAL PREPARATION OF POLYCRYSTALLINE SILICON USING A<br />

FLUIDIZED BED REACTOR"<br />

(51) International classification :C30B 29/06 (71)Name <strong>of</strong> Applicant :<br />

(31) Priority Document No :10-2006-0053826 1)KOREA RESEARCH INSTITUTE OF CHEMICAL<br />

(32) Priority Date :15/06/2006 TECHNOLOGY<br />

(33) Name <strong>of</strong> priority country :Republic <strong>of</strong> Korea Address <strong>of</strong> Applicant :100 JANG-DONG,YUSEONG-GU,<br />

(86) International Application No :PCT/KR2007/002880 DAEJEON 305-343, REPUBLIC OF KOREA Republic <strong>of</strong> Korea<br />

Filing Date<br />

:14/06/2007 (72)Name <strong>of</strong> Inventor :<br />

(87) International Publication No :WO 2007/145474 1)KIM HEE YOUNG<br />

(61) Patent <strong>of</strong> Addition to Application<br />

Number<br />

Filing Date<br />

:NA<br />

:NA<br />

2)YOON KYUNG KOO<br />

3)PARK YONG KI<br />

4)CHOI WON CHOON<br />

(62) Divisional to Application Number :NA<br />

Filing Date<br />

:NA<br />

(57) Abstract :<br />

There is provided a method for continual preparation <strong>of</strong> granular polycrystalline silicon using a fluidized bed reactor, enabling a<br />

stable, long-term operation <strong>of</strong> the reactor by effective removal <strong>of</strong> silicon deposit accumulated on the inner wall <strong>of</strong> the reactor tube. The<br />

method comprises (i) a silicon <strong>part</strong>icle preparation step, wherein silicon deposition occurs on the surface <strong>of</strong> the silicon <strong>part</strong>icles, while<br />

silicon deposit is accumulated on the inner wall <strong>of</strong> the reactor tube encompassing the reaction zone; (ii) a silicon <strong>part</strong>icle <strong>part</strong>ial<br />

discharging step, wherein a <strong>part</strong> <strong>of</strong> the silicon <strong>part</strong>icles remaining inside the reactor tube is discharged out <strong>of</strong> the fluidized bed reactor<br />

so that the height <strong>of</strong> the bed <strong>of</strong> the silicon <strong>part</strong>icles does not exceed the height <strong>of</strong> the reaction gas outlet; <strong>and</strong> (iii) a silicon deposit<br />

removal step, wherein the silicon deposit is removed by supplying an etching gas into the reaction zone.<br />

No. <strong>of</strong> Pages : 79 No. <strong>of</strong> Claims : 19<br />

The Patent Office Journal 24/10/2008 25952

Hooray! Your file is uploaded and ready to be published.

Saved successfully!

Ooh no, something went wrong!