continued from part 1 - Controller General of Patents, Designs, and ...

(12) PATENT APPLICATION PUBLICATION (21) Application No.6361/DELNP/2008 A
(19) INDIA
(22) Date of filing of Application :21/07/2008 (43) Publication Date : 24/10/2008
(54) Title of the invention : "METHOD OF ETCHING A SILICON-BASED MATERIAL"
(51) International classification :H01L 21/306 (71)Name of Applicant :
(31) Priority Document No :0601318.9
1)NEXEON LTD
(32) Priority Date :23/01/2006
Address of Applicant :9400 GARSINGTON
(33) Name of priority country :U.K.
ROAD,OXFORD BUSINESS PARK,OXFORD OX4
(86) International Application No :PCT/GB2007/000204 2HN,GREAT BRITAIN. U.K.
Filing Date
:23/01/2007 (72)Name of Inventor :
(87) International Publication No :WO 2007/083152 1)GREEN,MINO
(61) Patent of Addition to Application
Number
Filing Date
:NA
:NA
2)LIU, FENGMING
(62) Divisional to Application Number :NA
Filing Date
:NA
(57) Abstract :
A method is described of selectively etching a silicon substrate in small local areas in order to form columns or pillars in the etched
surface. The silicon substrate is held in an etching solution of hydrogen fluoride, a silver salt and an alcohol. The inclusion of the
alcohol provides a greater packing density of the silicon columns.
No. of Pages : 21 No. of Claims : 29
The Patent Office Journal 24/10/2008 25899