DISSERTATION

_____________________________________________________________ Results and Discussion
Figure 3.34. Capacitance kinetics curves obtained for potential-pulse assisted SAM
formation of MCU using different potential pulse intensities. Pulse time was kept constant
at 10 ms for all experiments. All measurements were performed in 10 mM PB, 20 mM
K2SO4 (30 % ethanol) containing 1 mM MCU. Figure adapted from ref. 89 .
Figure 3.35. Capacitance kinetics curves obtained for potential-pulse assisted SAM
formation of MCU using the 0.3/-0.1 V pulse profile while varying the pulse time. All
measurements were performed as explained in Figure 3.34. Figure adapted from ref. 89 .
3.3 Importance of controlling the surface 73