eldo_user

Optimization
MOS Characterization
* CIRCUIT STATEMENTS
VDS 104 0 VDS
VGS 102 0 VGS
VBS 103 0 VBS
M25X25D1 101 102 0 103 NMOS W=25U L=25U NRS=0.12 NRD=0.12
V101 104 101 0
* THE MODEL
.MODEL NMOS NMOS(LEVEL=3 TOX=2.0E-8 NSUB=1E16
+ LD=LD VTO=VTO GAMMA=GAMMA UO=UO VMAX=VMAX
+ THETA=THETA ETA=ETA KAPPA=KAPPA)
Design Variables
This example performs optimization of the level 3 parameters: LD, VTO, GAMMA, UO,
VMAX, THETA, ETA, and KAPPA. The corresponding statements are:
.PARAM
+ LD=1E-7 VTO=1.0 GAMMA=0.6 UO=600 VMAX=1E5
+ THETA=0.1 ETA=0.01 KAPPA=1
.OPTION PARAMOPT_NOINITIAL
.PARAMOPT
+ LD = ( 1E-9, 5E-7)
+ VTO = ( 0, 2)
+ GAMMA = ( 0.1, 2)
+ UO = ( 300, 900)
+ VMAX = ( 1E4, 1E7)
+ THETA = ( 1E-6, 2)
+ ETA = ( 1E-4, 2)
+ KAPPA = ( 1E-6, 1E3)
ALTER Blocks and Design Objectives
In our example the netlist consists of two blocks, the second is defined with a .ALTER
command.
The first .OBJECTIVE command has a local scope. This means that the expression I(V101) is
computed in a specific simulation context. This context is related to a ALTER block (the first
block may be considered as the root block or nominal case).
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Eldo® User's Manual, 15.3