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Optimization<br />

MOS Characterization<br />

Related Topics<br />

Optimization Options<br />

Specifying Design Variables<br />

Vector Design Objectives<br />

Goal Values Objectives<br />

MOS Characterization<br />

Netlist file: nmos.cir<br />

This example illustrates the combination of a double DC sweep and ALTER blocks for the<br />

optimization of I-V data for a Level 3 MOS model. The data consists of drain characteristics<br />

(IDS versus VDS and VGS) with two different choices of the length parameter L.<br />

The data is stored in two separate .DATA statements (d25x25.dat and d25x2p5.dat files). The<br />

I-V curves are shown in Figure 13-23 at the initial point of optimization.<br />

Figure 13-23. Illustration of I-V characteristics<br />

Circuit Statements<br />

The circuit and the model statement are given below. The circuit is a simple single transistor<br />

circuit. The parameters VDS, VGS and VBS are the names of the sweep parameters used in the<br />

parametric DC analyses.<br />

Eldo® User's Manual, 15.3 675

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