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Setting Up An Analysis<br />

Statistical and Sensitivity Related Analyses<br />

Statistical and Sensitivity Related Analyses<br />

The statistical and sensitivity related analyses are listed here.<br />

Monte Carlo Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 265<br />

Worst Case Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 267<br />

DC Mismatch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269<br />

DC Sensitivity Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 270<br />

Transient Sensitivity Analysis. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272<br />

AC Sensitivity Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 272<br />

Sensitivity Analysis of Parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 273<br />

Design of Experiments Analysis . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 274<br />

Monte Carlo Analysis<br />

Monte Carlo analysis (.MC command) determines the uncertainty in estimates for dependent<br />

variables of interest. It focuses on data and how uncertainty in data propagates through<br />

computations.<br />

Eldo reads a netlist describing the circuit and translates it into mathematical equations. The<br />

inputs are the various design parameters, the process parameters, and the environmental<br />

conditions. The output space is characterized by the circuit performance of interest.<br />

Monte Carlo-based uncertainty analysis is performed on multiple model evaluations with<br />

randomly selected model input variables. The results of these evaluations (experiments) are<br />

then used to determine the uncertainty in model predictions, and the input variables that gave<br />

rise to this uncertainty.<br />

In statistical models for transistor level simulation, there are two types of variability in device<br />

properties:<br />

• Inter-die (between chips) variations or global variations (LOT keyword).<br />

Typical examples of statistical parameters with global tolerances are oxide thickness or<br />

channel length reduction.<br />

• Intra-die (within chip) variations are local variations that affect transistors individually<br />

(DEV keyword).<br />

A typical example of statistical parameters with local tolerances are the transistor<br />

threshold voltages.<br />

The overall Monte Carlo analysis run is made of several chunks of simulations. Using an<br />

incremental approach provides an insight into the spread of distribution. You can also<br />

extrapolate to obtain the general shape of the distribution. In Eldo, you control the sample size<br />

Eldo® User's Manual, 15.3 265

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